公开(公告)号：US20030146681A1

公开(公告)日：2003-08-07

申请号：US10067625

申请日：2002-02-04

Applicant: InnoSys, Inc.

Inventor： RueyJen Hwu ,  Larry Sadwick

IPC: H01J001/46 ,  H01J021/10

CPC classification number: H01J19/08 ,  H01J21/105

Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract translation: 固态真空装置（SSVD）及其制造方法。 在一个实施例中，SSVD形成三极管器件，其包括其中形成有腔的衬底。 SSVD还包括位于衬底的空腔中的阳极，悬浮在衬底的空腔上的阴极和位于阴极和阳极之间的栅极。 此外，SSVD包括用于在围绕栅极，阴极和阳极的区域中产生真空环境的密封。 在向阴极施加热量时，电子从阴极释放，通过栅格并被阳极接收。 响应于接收电子，阳极产生电流。 由阳极产生的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管，四极管，五极管和其它高阶器件配置。