Buffered resist profile etch of a field emission device structure

    公开(公告)号:US20010005110A1

    公开(公告)日:2001-06-28

    申请号:US09761375

    申请日:2001-01-16

    CPC classification number: H01J9/025 H01J1/3044

    Abstract: A method for forming an emitter tip for use in a field emission device. An emitter layer is provided over a substrate. The emitter layer is overlaid with a blanket dielectric which is in turn overlaid by a masking layer. In a first etching operation, a masking island and an underlying dielectric island are formed from the masking layer and the blanket dielectric, respectively. These islands serve as a masking structure during subsequent etching processes by which an emitter tip is formed from the emitter layer. Accordingly, a second etching operation is conducted, whereby an etch chemistry which exhibits both isotropic and anisotropic characteristics is used to remove a portion of the emitter layer by undercutting beneath the masking structure. A third etching operation is conducted, wherein the etch chemistry is substantially more anisotropic than the etch chemistry of the second etching operation. The second and third etches mobilize a portion of the masking layer and form an emitter tip from the emitter layer. The emitter tip has a substantially rectilinear vertical profile.

    Solid state vacuum devices and method for making the same
    2.
    发明申请
    Solid state vacuum devices and method for making the same 失效
    固态真空装置及其制造方法

    公开(公告)号:US20030146681A1

    公开(公告)日:2003-08-07

    申请号:US10067625

    申请日:2002-02-04

    Applicant: InnoSys, Inc.

    CPC classification number: H01J19/08 H01J21/105

    Abstract: A solid state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises an anode positioned in the cavity of the substrate, a cathode suspended over the cavity of the substrate, and a grid positioned between the cathode and anode. In addition, the SSVD comprises a seal for creating a vacuum environment in the area surrounding the grid, cathode, and anode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current produced by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

    Abstract translation: 固态真空装置(SSVD)及其制造方法。 在一个实施例中,SSVD形成三极管器件,其包括其中形成有腔的衬底。 SSVD还包括位于衬底的空腔中的阳极,悬浮在衬底的空腔上的阴极和位于阴极和阳极之间的栅极。 此外,SSVD包括用于在围绕栅极,阴极和阳极的区域中产生真空环境的密封。 在向阴极施加热量时,电子从阴极释放,通过栅格并被阳极接收。 响应于接收电子,阳极产生电流。 由阳极产生的电流由施加到电网的电压控制。 本发明的其它实施例提供二极管,四极管,五极管和其它高阶器件配置。

    Fabrication of chopper for particle beam instrument
    3.
    发明申请
    Fabrication of chopper for particle beam instrument 失效
    粒子束仪的切碎机制造

    公开(公告)号:US20030048059A1

    公开(公告)日:2003-03-13

    申请号:US10165851

    申请日:2002-06-07

    Abstract: A technique for providing a grid for a gate such as utilized in gating a stream of ions or other particles in a spectrometer instrument. The grid of wires may, for example, be a so-called Bradbury-Nielson Gate that consists of a set of two electrically isolated sets of equally spaced wires that lie substantially in the same plane and alternate in potential. The method utilized to provide is to first fabricate a frame of an insulating substrate having a hole and depositing metal film patterns such that conductive portions are formed on either side of the hole. Conductive portions on either side form a series of terminating pads on the portion of the substrate closest to the hole and a bus bar. Grid wires are then formed by stretching a section of wire with desired constant tension across the hole and bonding the ends of the wire to a respective one of the pads on one side and bus bar on the other side. The method provides a rapid, inexpensive way to fabricate such modulating devices.

    Abstract translation: 提供用于门的栅格的技术,例如用于在光谱仪器中门控离子或其他颗粒物流。 电线的网格可以是例如所谓的Bradbury-Nielson门,其由两组基本上位于同一平面中且交替潜在的等间隔的导线的两组电隔离组合组成。 用于提供的方法是首先制造具有孔的绝缘基板的框架并沉积金属膜图案,使得导电部分形成在孔的任一侧上。 任一侧上的导电部分形成在最靠近该孔的基板部分上的一系列端接焊盘和汇流条。 然后通过将所需的恒定张力的一段导线拉伸穿过该孔并且将导线的端部粘合到另一侧的一侧上的焊盘和另一侧的母线上而形成网格线。 该方法提供了制造这种调制装置的快速,便宜的方式。

    Method of manufacturing field-emission electron emitters and method of manufacturing substrates having a matrix electron emitter array formed thereon
    4.
    发明申请
    Method of manufacturing field-emission electron emitters and method of manufacturing substrates having a matrix electron emitter array formed thereon 失效
    制造场发射电子发射体的方法和制造其上形成有矩阵电子发射器阵列的衬底的方法

    公开(公告)号:US20020182761A1

    公开(公告)日:2002-12-05

    申请号:US10092440

    申请日:2002-03-08

    Inventor: Koji Suzuki

    CPC classification number: H01J9/027 H01J9/025 H01J2201/3165

    Abstract: In a method of manufacturing matrix electron emitter arrays, each array comprising a plurality of scanning lines formed on a glass substrate and arranged in parallel with each other, a plurality of signal lines formed in a direction to cross the scanning lines and arranged in parallel with each other, and field-emission type electron emitters formed in the pixel areas which are arranged at the intersections of the scanning lines and the signal lines, a pulse voltage with a specific polarity and another pulse voltage with the reverse polarity are applied to any two of the scanning lines and current is caused to flow through electron emitters connected in series-via a signal line, thereby subjecting the conductive thin film constituting an electron emitter to a conductive activation process for forming an electron emitting section.

    Abstract translation: 在制造矩阵电子发射器阵列的方法中,每个阵列包括形成在玻璃基板上并且彼此平行布置的多条扫描线,沿与扫描线交叉的方向形成并且与 彼此以及在扫描线和信号线的交叉点配置的像素区域中形成的场致发射型电子发射体,具有特定极性的脉冲电压和具有相反极性的另一个脉冲电压被施加到任何两个 使扫描线和电流流过通过信号线串联连接的电子发射体,从而使构成电子发射体的导电薄膜经受用于形成电子发射部分的导电激活过程。

    Temperature compensated gun
    5.
    发明申请
    Temperature compensated gun 失效
    温度补偿枪

    公开(公告)号:US20020153818A1

    公开(公告)日:2002-10-24

    申请号:US09839207

    申请日:2001-04-23

    CPC classification number: H01J23/065 H01J2225/04

    Abstract: The invention relates to linear beam amplification devices having an electron emitting cathode and an RF modulated grid closely spaced therefrom, and more particularly, to a novel support structure for the grid that accommodates thermal expansion while maintaining an optimum grid-to-cathode spacing.

    Abstract translation: 本发明涉及具有电子发射阴极和与其紧密隔开的RF调制栅格的线性光束放大装置,更具体地说,涉及一种用于容纳热膨胀同时保持最佳栅格与阴极间隔的网格的新型支撑结构。

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