-
公开(公告)号:US11349068B2
公开(公告)日:2022-05-31
申请号:US16292180
申请日:2019-03-04
Applicant: Intel Corporation
Inventor: Pengyuan Zheng , Stephen W. Russell , David R. Economy
Abstract: A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.
-
公开(公告)号:US11018298B2
公开(公告)日:2021-05-25
申请号:US16619040
申请日:2017-07-01
Applicant: Intel Corporation
Inventor: Christopher W. Petz , David R. Economy
Abstract: A phase change memory structure (100) includes a phase change material layer (110), a top electrode layer (120) above the phase change material layer, a metal silicon nitride layer (130) in contact with the top electrode layer opposite from the phase change material layer, a metal silicide layer (140) in contact with the metal silicon nitride layer opposite from the top electrode layer, and a conductive metal bit line (150) in contact with the metal silicide layer opposite from the metal silicon nitride layer.
-
公开(公告)号:US20190198756A1
公开(公告)日:2019-06-27
申请号:US16292180
申请日:2019-03-04
Applicant: Intel Corporation
Inventor: Pengyuan Zheng , Stephen W. Russell , David R. Economy
IPC: H01L45/00
CPC classification number: H01L45/06 , H01L45/1253 , H01L45/144 , H01L45/1608 , H01L45/1675
Abstract: A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.
-
-