公开(公告)号：US11349068B2

公开(公告)日：2022-05-31

申请号：US16292180

申请日：2019-03-04

Applicant: Intel Corporation

Inventor： Pengyuan Zheng ,  Stephen W. Russell ,  David R. Economy

IPC: H01L29/00 ,  H01L45/00 ,  H01L27/24

Abstract: A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.

公开(公告)号：US11018298B2

公开(公告)日：2021-05-25

申请号：US16619040

申请日：2017-07-01

Applicant: Intel Corporation

Inventor： Christopher W. Petz ,  David R. Economy

IPC: H01L45/00 ,  H01L27/24

Abstract: A phase change memory structure (100) includes a phase change material layer (110), a top electrode layer (120) above the phase change material layer, a metal silicon nitride layer (130) in contact with the top electrode layer opposite from the phase change material layer, a metal silicide layer (140) in contact with the metal silicon nitride layer opposite from the top electrode layer, and a conductive metal bit line (150) in contact with the metal silicide layer opposite from the metal silicon nitride layer.

公开(公告)号：US20190198756A1

公开(公告)日：2019-06-27

申请号：US16292180

申请日：2019-03-04

Applicant: Intel Corporation

Inventor： Pengyuan Zheng ,  Stephen W. Russell ,  David R. Economy

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: A memory cell can include a phase change material layer and a first electrode layer adjacent to the phase change material layer and having a phase change material layer side oriented toward the phase change material layer and a bit line side opposite the phase change material layer side. A carbon nitride layer can be on the bit line side surface of the first electrode layer. In some examples, a nonconductive separator material can have a word line end and a bit line end, and can have a portion contacting the phase change material layer. The bit line end surface of the nonconductive separator material can be at least partially free of contact with the carbon nitride layer.