公开(公告)号：US10559689B2

公开(公告)日：2020-02-11

申请号：US15777707

申请日：2015-12-24

Applicant: INTEL CORPORATION

Inventor： Karthik Jambunathan ,  Glenn A. Glass ,  Anand S. Murthy ,  Jacob M. Jensen ,  Daniel B. Aubertine ,  Chandra S. Mohapatra

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/417 ,  H01L21/02 ,  H01L29/165 ,  H01L29/66 ,  H01L29/786

Abstract: Tensile strain is applied to a channel region of a transistor by depositing an amorphous SixGe1-x-yCy alloy in at least one of a source and a drain (S/D) region of the transistors. The amorphous SixGe1-x-yCy alloy is crystallized, thus reducing the unit volume of the alloy. This volume reduction in at least one of the source and the drain region applies strain to a connected channel region. This strain improves electron mobility in the channel. Dopant activation in the source and drain locations is recovered during conversion from amorphous to crystalline structure. Presence of high carbon concentrations reduces dopant diffusion from the source and drain locations into the channel region. The techniques may be employed with respect to both planar and non-planar (e.g., FinFET and nanowire) transistors.

公开(公告)号：US10522510B2

公开(公告)日：2019-12-31

申请号：US15575323

申请日：2015-06-26

Applicant: Intel Corporation

Inventor： Kimin Jun ,  Jacob M. Jensen ,  Patrick Morrow ,  Paul B. Fischer

IPC: H01L25/00 ,  H01L25/065 ,  H01L25/07 ,  H01L25/16 ,  H01L23/00 ,  H01L21/683

Abstract: A method including coupling a device substrate to a carrier substrate; aligning a portion of the device substrate to a host substrate; separating the portion of the device substrate from the carrier substrate; and after separating the portion of the device substrate, coupling the portion of the device substrate to the host substrate. A method including coupling a device substrate to a carrier substrate with an adhesive between a device side of the device substrate and the carrier substrate; after coupling the device substrate to the carrier substrate, thinning the device substrate; aligning a portion of the thinned device substrate to a host substrate; separating the portion of the device substrate from the carrier substrate; and coupling the separated portion of the device substrate to the host substrate. An apparatus including a substrate including a submicron thickness and a device layer coupled to a host substrate in a stacked arrangement.