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公开(公告)号:US10762939B2
公开(公告)日:2020-09-01
申请号:US15640530
申请日:2017-07-01
Applicant: Intel Corporation
Inventor: Christopher J. Larsen , David A. Daycock , Qian Tao , Saniya Rathod , Devesh K. Datta , Srivardhan Gowda , Rithu K. Bhonsle
IPC: G11C11/34 , G11C8/12 , G06F3/06 , G06F12/02 , G11C16/06 , G11C19/28 , H01L27/11582 , G11C5/02 , G11C16/04
Abstract: Computer memory technology is disclosed. In one example, a method for isolating computer memory blocks in a memory array from one another can include forming an opening between adjacent blocks of memory structures. The method can also include forming a protective liner layer on at least the memory structures. The method can further include disposing isolating material in the opening and on the protective liner layer. The method can even further include removing the isolating material on the protective liner layer. The method can additionally include removing the protective liner layer on the memory structures. Associated devices and systems are also disclosed.
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公开(公告)号:US20190005996A1
公开(公告)日:2019-01-03
申请号:US15640530
申请日:2017-07-01
Applicant: Intel Corporation
Inventor: Christopher J. Larsen , David A. Daycock , Qian Tao , Saniya Rathod , Devesh K. Datta , Srivardhan Gowda , Rithu K. Bhonsle
Abstract: Computer memory technology is disclosed. In one example, a method for isolating computer memory blocks in a memory array from one another can include forming an opening between adjacent blocks of memory structures. The method can also include forming a protective liner layer on at least the memory structures. The method can further include disposing isolating material in the opening and on the protective liner layer. The method can even further include removing the isolating material on the protective liner layer. The method can additionally include removing the protective liner layer on the memory structures. Associated devices and systems are also disclosed.
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