公开(公告)号：US20240114697A1

公开(公告)日：2024-04-04

申请号：US17958279

申请日：2022-09-30

Applicant: Intel Corporation

Inventor： Shriram SHIVARAMAN ,  Sou-Chi CHANG ,  Sourav DUTTA ,  Uygar E. AVCI

IPC: H01L27/11507

CPC classification number: H01L27/11507

Abstract: Embodiments disclosed herein include a memory device. In an embodiment, the memory device comprises a first transistor, where the first transistor is an access transistor to write data. In an embodiment, the memory device further comprises a ferroelectric capacitor for storing data. In an embodiment, the memory device further comprises a second transistor, where the second transistor is a sense transistor to read the data stored on the ferroelectric capacitor.