公开(公告)号：US20240355876A1

公开(公告)日：2024-10-24

申请号：US18303932

申请日：2023-04-20

Applicant: Intel corporation

Inventor： Siddharth Gupta ,  Robin Chao ,  Jay Prakash Gupta ,  Aravind Killampalli ,  Biswajeet Guha

IPC: H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423

CPC classification number: H01L29/0665 ,  H01L21/823807 ,  H01L27/0922 ,  H01L29/42364

Abstract: Described herein are nanoribbon-based transistors with a highly uniform oxide layer around semiconductor nanoribbon channels, and a high-pressure steam process for growth the oxide layer. The high-pressure steam process is a self-limiting process that results in a more uniform oxide than standard deposition or implantation methods. The uniformity enables greater control over oxide thickness, with improved breakdown voltages and drive currents.