公开(公告)号：US20150179438A1

公开(公告)日：2015-06-25

申请号：US14136271

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Khaled Ahmed ,  Frank Greer ,  Raj Jammy

IPC: H01L21/02 ,  H01L29/40

CPC classification number: H01L21/02301 ,  C23C16/0227 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/0485 ,  H01L29/66068 ,  H01L29/78

Abstract: SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A dielectric interface layer is deposited in-situ to passivate the surface. Metal layers having a low work function are deposited above the dielectric interface layer. The stack is annealed at about 500C in forming gas to form low resistivity ohmic contacts to the SiC substrate. SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A silicon oxide dielectric interface layer is deposited in-situ to passivate the surface. Optional plasma surface treatments are applied to further improve the performance of the silicon oxide dielectric interface layer. An aluminum oxide gate dielectric layer is deposited above the silicon oxide dielectric interface layer.

Abstract translation: 将SiC衬底清洁并提供给处理室。 施加原位等离子体表面处理以进一步清洁基底的表面。 电介质界面层原位沉积以钝化表面。 具有低功函数的金属层沉积在电介质界面层的上方。 堆叠在大约500℃下在形成气体中退火以形成到SiC衬底的低电阻率欧姆接触。 将SiC衬底清洁并提供给处理室。 施加原位等离子体表面处理以进一步清洁基底的表面。 氧化硅介电界面层原位沉积以钝化表面。 施加可选的等离子体表面处理以进一步提高氧化硅介电界面层的性能。 在氧化硅介电界面层上沉积氧化铝栅极电介质层。

公开(公告)号：US09076651B1

公开(公告)日：2015-07-07

申请号：US14136271

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Khaled Ahmed ,  Frank Greer ,  Raj Jammy

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/02 ,  H01L29/40

CPC classification number: H01L21/02301 ,  C23C16/0227 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/0485 ,  H01L29/66068 ,  H01L29/78

Abstract: SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A dielectric interface layer is deposited in-situ to passivate the surface. Metal layers having a low work function are deposited above the dielectric interface layer. The stack is annealed at about 500C in forming gas to form low resistivity ohmic contacts to the SiC substrate. SiC substrates are cleaned and provided to a process chamber. In-situ plasma surface treatments are applied to further clean the surface of the substrate. A silicon oxide dielectric interface layer is deposited in-situ to passivate the surface. Optional plasma surface treatments are applied to further improve the performance of the silicon oxide dielectric interface layer. An aluminum oxide gate dielectric layer is deposited above the silicon oxide dielectric interface layer.

Abstract translation: 将SiC衬底清洁并提供给处理室。 施加原位等离子体表面处理以进一步清洁基底的表面。 电介质界面层原位沉积以钝化表面。 具有低功函数的金属层沉积在电介质界面层的上方。 堆叠在大约500℃下在形成气体中退火以形成到SiC衬底的低电阻率欧姆接触。 将SiC衬底清洁并提供给处理室。 施加原位等离子体表面处理以进一步清洁基底的表面。 氧化硅介电界面层原位沉积以钝化表面。 施加可选的等离子体表面处理以进一步提高氧化硅介电界面层的性能。 在氧化硅介电界面层上沉积氧化铝栅极电介质层。