公开(公告)号：US20040087135A1

公开(公告)日：2004-05-06

申请号：US10280283

申请日：2002-10-24

申请人： International Business Machines Corporation

发明人： Donald F. Canaperi ,  Timothy J. Dalton ,  Stephen M. Gates ,  Mahadevaiyer Krishnan ,  Satya V. Nitta ,  Sampath Purushothaman ,  Sean P.E. Smith

IPC分类号： H01L021/4763

CPC分类号： H01L21/76807 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.

摘要翻译： 一个结构包含非常低的介电常数（k）绝缘体与铜布线，以实现高性能互连。 布线由相对耐用的低k电介质（例如SiLk或SiO 2）支撑，并且在该结构的其余部分中设置非常低的k和较不牢固的间隙填充电介质，使得该结构将耐用层与强度非常低 k电介质用于互连电性能。