公开(公告)号：US20070281172A1

公开(公告)日：2007-12-06

申请号：US11726290

申请日：2007-03-21

申请人： James Gregory Couillard ,  Philippe Lehuede ,  Sophie A. Vallon

发明人： James Gregory Couillard ,  Philippe Lehuede ,  Sophie A. Vallon

IPC分类号： H01L21/00 ,  B32B9/04 ,  H01L21/324 ,  G21K5/00

CPC分类号： H01L21/268 ,  G02F2202/09 ,  G02F2202/104 ,  H01L21/302 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/67115 ,  H01L21/7624 ,  H01L21/76254

摘要： Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.

摘要翻译： 绝缘体上半导体（SOI）结构的系统和方法和产品，包括使至少一个未完成的表面进行激光退火处理。 SOI结构的制造还可以包括使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 将剥离层的注入表面接合到绝缘体基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行激光退火处理。