公开(公告)号：US11605653B2

公开(公告)日：2023-03-14

申请号：US17189404

申请日：2021-03-02

Applicant: Japan Display Inc.

Inventor： Manabu Yamashita

IPC: H01L27/14 ,  H01L27/12 ,  H01L27/32

Abstract: Disclosed is a semiconductor device including a gate wiring, an active layer, a gate insulating film, a first wiring, a second wring, and a first semiconductor film. The gate wiring includes a gate electrode. The active layer overlaps with the gate electrode and contains an oxide semiconductor. The gate insulating film is sandwiched by the gate electrode and the active layer. The first wiring and the second wiring are each located over the active layer and respectively include a first terminal and a second terminal which are electrically connected to the active layer. The first semiconductor film is located under and in contact with the first wiring and contains the oxide semiconductor.

公开(公告)号：US09978989B2

公开(公告)日：2018-05-22

申请号：US15229629

申请日：2016-08-05

Applicant: Japan Display Inc.

Inventor： Kazufumi Watabe ,  Hiroshi Kawanago ,  Manabu Yamashita ,  Hideaki Ishige

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/5253 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/5203 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/566

Abstract: First rib layers made of an inorganic material are formed in first frame regions of a first glass substrate. First resin layers are formed in first product regions after the first rib layers are formed. First functional layers which include light emitting element layers as a result of luminance of each of unit pixels forming an image being controlled and sealing layers covering the light emitting element layers are formed on the first rib layers and the first resin layers. The first rib layers and the first functional layers are cut along lines passing through the first frame regions while avoiding the first product regions in order to separate the first product regions from each other. In the step of cutting the first rib layers and the first functional layers, the first rib layers and the sealing layers are cut.

公开(公告)号：US10707240B2

公开(公告)日：2020-07-07

申请号：US16123046

申请日：2018-09-06

Applicant: Japan Display Inc.

Inventor： Manabu Yamashita

IPC: H01L27/146 ,  H01L27/12 ,  H01L23/532 ,  G02F1/1337 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1362 ,  G09G3/36 ,  G02F1/1368

Abstract: The purpose of the invention is to countermeasure a disconnection between the drain electrode or the source electrode and the wiring or the electrode formed on the insulating film via through hole. The concrete structure is that: A display device having a display area including a plurality of pixels comprising: the pixel includes a thin film transistor having a semiconductor layer as an active element, a first insulating film is formed to cover a drain electrode of the thin film transistor, the drain electrode is connected with an electrode or an wiring that are formed on the first insulating film via a through hole, an oxide semiconductor layer exists between the drain electrode and the first insulating film, the oxide semiconductor layer does not exist at the bottom of the through hole.

公开(公告)号：US20190074299A1

公开(公告)日：2019-03-07

申请号：US16123046

申请日：2018-09-06

Applicant: Japan Display Inc.

Inventor： Manabu Yamashita

IPC: H01L27/12 ,  H01L23/532 ,  G02F1/1337 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362 ,  G09G3/36

Abstract: The purpose of the invention is to countermeasure a disconnection between the drain electrode or the source electrode and the wiring or the electrode formed on the insulating film via through hole. The concrete structure is that: A display device having a display area including a plurality of pixels comprising: the pixel includes a thin film transistor having a semiconductor layer as an active element, a first insulating film is formed to cover a drain electrode of the thin film transistor, the drain electrode is connected with an electrode or an wiring that are formed on the first insulating film via a through hole, an oxide semiconductor layer exists between the drain electrode and the first insulating film, the oxide semiconductor layer does not exist at the bottom of the through hole.