公开(公告)号：US20050083372A1

公开(公告)日：2005-04-21

申请号：US10686231

申请日：2003-10-15

申请人： Jeffrey Obert ,  Thomas Ottenheimer

发明人： Jeffrey Obert ,  Thomas Ottenheimer

IPC分类号： B41J2/14 ,  B41J2/16

CPC分类号： B41J2/1628 ,  B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1629 ,  Y10T29/49083 ,  Y10T29/49401

摘要： The described embodiments relate to slotted substrates and methods of making the slotted substrates. One exemplary method patterns a first set of dummy features in a first layer positioned over a first surface of a substrate and patterns a second set of dummy features in a second layer positioned over the first layer. After the method patterns the first set of dummy features and the second set of dummy features, the method further forms a slot in the substrate, at least in part, by allowing an etchant to pass through the first and second sets of dummy features to the first surface.

摘要翻译： 所描述的实施例涉及开槽基板和制造开槽基板的方法。 一种示例性方法在位于衬底的第一表面上的第一层中形成第一组虚拟特征，并且在位于第一层上的第二层中对第二组虚拟特征进行图案化。 在所述方法对所述第一组虚拟特征和所述第二组虚拟特征进行图案化之后，所述方法进一步在所述基板中形成槽，所述方法至少部分地通过允许蚀刻剂穿过所述第一和第二组虚拟特征到 第一表面。

公开(公告)号：US20060225279A1

公开(公告)日：2006-10-12

申请号：US11450572

申请日：2006-06-09

申请人： Jeffrey Obert ,  Thomas Ottenheimer

发明人： Jeffrey Obert ,  Thomas Ottenheimer

IPC分类号： B21D53/76

CPC分类号： B41J2/1628 ,  B41J2/1404 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1629 ,  Y10T29/49083 ,  Y10T29/49401

摘要： The described embodiments relate to slotted substrates and methods of making the slotted substrates. One exemplary method patterns a first set of dummy features in a first layer positioned over a first surface of a substrate and patterns a second set of dummy features in a second layer positioned over the first layer. After the method patterns the first set of dummy features and the second set of dummy features, the method further forms a slot in the substrate, at least in part, by allowing an etchant to pass through the first and second sets of dummy features to the first surface.

公开(公告)号：US20060264055A1

公开(公告)日：2006-11-23

申请号：US11492518

申请日：2006-07-24

申请人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

发明人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

IPC分类号： H01L21/302

CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1634

摘要： A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

公开(公告)号：US20060192815A1

公开(公告)日：2006-08-31

申请号：US11410358

申请日：2006-04-25

申请人： Jeremy Donaldson ,  Eric Nikkel ,  Jeffrey Obert ,  Jeffrey Pollard ,  Jeff Hess

发明人： Jeremy Donaldson ,  Eric Nikkel ,  Jeffrey Obert ,  Jeffrey Pollard ,  Jeff Hess

IPC分类号： B41J2/135

CPC分类号： B41J2/1631 ,  B41J2/14145 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1634

摘要： Methods and systems for forming compound slots in a substrate are described. In one exemplary implementation, a structure contains a plurality of slots in a substrate. The structure also has a trench in the substrate contiguous with the plurality of slots to form a compound slot.

摘要翻译： 描述了在衬底中形成复合槽的方法和系统。 在一个示例性实施例中，结构在衬底中包含多个槽。 该结构还在衬底中具有与多个槽相邻的沟槽，以形成复合槽。

公开(公告)号：US20060094200A1

公开(公告)日：2006-05-04

申请号：US10977090

申请日：2004-10-29

申请人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

发明人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

IPC分类号： H01L21/76

CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1634

摘要： A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.