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    Methods for controlling feature dimensions in crystalline substrates
    2.
    发明申请
    Methods for controlling feature dimensions in crystalline substrates 有权

    公开(公告)号：US20060264055A1

    公开(公告)日：2006-11-23

    申请号：US11492518

    申请日：2006-07-24

    申请人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

    发明人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

    IPC分类号： H01L21/302

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1634

    摘要： A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

    Methods for controlling feature dimensions in crystalline substrates
    5.
    发明申请
    Methods for controlling feature dimensions in crystalline substrates 失效

    公开(公告)号：US20060094200A1

    公开(公告)日：2006-05-04

    申请号：US10977090

    申请日：2004-10-29

    申请人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

    发明人： Steven Leith ,  Jeffrey Obert ,  Eric Nikkel ,  Kenneth Kramer

    IPC分类号： H01L21/76

    CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1632 ,  B41J2/1634

    摘要： A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying the opening and the oxide layer, removing substrate material through a second side to a first distance from the first side, and anisotropic etching the substrate to create a substrate opening at the first side which is aligned with the opening in the oxide layer during anisotropic etching. The material overlying the opening and the oxide layer is selected so that an anisotropic etch rate of the substrate at an interface of the material and the substrate is greater than an anisotropic etch rate of the substrate at an interface of the oxide layer and the substrate.

    Fluid-ejection device and methods of forming same
    9.
    发明申请
    Fluid-ejection device and methods of forming same 失效
    流体喷射装置及其形成方法

    公开(公告)号：US20050212868A1

    公开(公告)日：2005-09-29

    申请号：US10810270

    申请日：2004-03-26

    申请人： George Radominski ,  Steven Leith ,  Timothy Emery ,  Thomas Ottenheimer

    发明人： George Radominski ,  Steven Leith ,  Timothy Emery ,  Thomas Ottenheimer

    IPC分类号： B05C5/00 ,  B41J2/04 ,  B41J2/07 ,  B41J2/14 ,  B41J2/045

    CPC分类号： B41J2/14 ,  B41J2/04

    摘要： The described embodiments relate to fluid-ejection devices and methods of forming same. One exemplary embodiment includes a plurality of fluid drop generators and associated electrically conductive paths, and at least one electron beam generation assembly configured to selectively direct at least one electron beam at individual electrically conductive paths sufficiently to cause fluid to be ejected from an associated fluid drop generator.

    摘要翻译： 所描述的实施例涉及流体喷射装置及其形成方法。 一个示例性实施例包括多个流体液滴发生器和相关联的导电路径，以及至少一个电子束产生组件，被配置为在各个导电路径下选择性地引导至少一个电子束，以使流体从相关联的液滴 发电机。