公开(公告)号：US20240331952A1

公开(公告)日：2024-10-03

申请号：US18126785

申请日：2023-03-27

Applicant: KEMET Electronics Corporation

Inventor： Subarna Banerjee ,  Ajaykumar Bunha ,  John T. Kinard ,  Antony P. Chacko

IPC: H01G9/025 ,  C07F9/117 ,  H01G9/00 ,  H01G9/042 ,  H01G9/052 ,  H01G9/15

CPC classification number: H01G9/025 ,  C07F9/117 ,  H01G9/0032 ,  H01G9/042 ,  H01G9/052 ,  H01G9/15 ,  H01G2009/05 ,  H01G9/07

Abstract: An improved formation electrolyte suitable for formation of an oxide on a valve metal anode and an improved capacitor comprising an oxide formed in the formation electrolyte is provided. The formation electrolyte comprises a derivative of inositol is defined by Formula 1:






wherein:
each of R1-R6 is defined.