公开(公告)号：US20140362366A1

公开(公告)日：2014-12-11

申请号：US14466516

申请日：2014-08-22

Applicant: KLA-Tencor Corporation

Inventor： Gildardo Delgado ,  Terry Johnson ,  Marco Arienti ,  Salam Harb ,  Lennie Klebanoff ,  Rudy Garcia ,  Mohammed Tahmassebpur ,  Sarah Scott

IPC: G01N21/15 ,  G01N21/95 ,  G03F7/20

CPC classification number: G01N21/15 ,  G01N21/9501 ,  G01N2021/151 ,  G03F7/705 ,  G03F7/70933

Abstract: A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.

Abstract translation: 一种用于确定半导体检测计量或光刻设备中的优化的吹扫气体流的计算机实现的方法，包括接收允许的污染物摩尔分数，与污染物相关的污染物除气流量，污染物质量扩散率，脱气表面长度 ，压力，温度，通道高度和吹扫气体的分子量，基于允许的污染物摩尔分数，污染物除气流量，通道高度和排气表面长度计算流量因子，比较 流量因子到预定的最大流量因子值，从流动因子，污染物质量扩散性，压力，温度和吹扫气体的分子量计算最小净化气体速度和吹扫气质量流率，并引入 吹扫气体进入具有最小清洗气体速度的半导体检测计量或光刻设备 净化气体流量。

公开(公告)号：US09874512B2

公开(公告)日：2018-01-23

申请号：US14466516

申请日：2014-08-22

Applicant: KLA-Tencor Corporation

Inventor： Gildardo Delgado ,  Terry Johnson ,  Marco Arienti ,  Salam Harb ,  Lennie Klebanoff ,  Rudy Garcia ,  Mohammed Tahmassebpur ,  Sarah Scott

IPC: G01N21/15 ,  G01N21/95 ,  G03F7/20

CPC classification number: G01N21/15 ,  G01N21/9501 ,  G01N2021/151 ,  G03F7/705 ,  G03F7/70933

Abstract: A computer-implemented method for determining an optimized purge gas flow in a semi-conductor inspection metrology or lithography apparatus, comprising receiving a permissible contaminant mole fraction, a contaminant outgassing flow rate associated with a contaminant, a contaminant mass diffusivity, an outgassing surface length, a pressure, a temperature, a channel height, and a molecular weight of a purge gas, calculating a flow factor based on the permissible contaminant mole fraction, the contaminant outgassing flow rate, the channel height, and the outgassing surface length, comparing the flow factor to a predefined maximum flow factor value, calculating a minimum purge gas velocity and a purge gas mass flow rate from the flow factor, the contaminant mass diffusivity, the pressure, the temperature, and the molecular weight of the purge gas, and introducing the purge gas into the semi-conductor inspection metrology or lithography apparatus with the minimum purge gas velocity and the purge gas flow rate.