公开(公告)号：US20220149217A1

公开(公告)日：2022-05-12

申请号：US17454404

申请日：2021-11-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon KIM ,  DaeMyeong GEUM ,  SeungYeop AHN ,  Jinha LIM

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L27/144 ,  H01L49/02 ,  H01L31/18

Abstract: Various embodiments relate to a superlattice photodetector and a method of manufacturing the same. The superlattice photodetector includes an absorption layer for absorbing incident light and a waveguide layer coupled with the absorption layer and enabling the incident light to be waveguided within the absorption layer. The waveguide layer may include a periodic structure in which a plurality of metal patterns and a plurality of dielectric patterns are repeatedly arranged. According to various embodiments, the superlattice photodetector can be thinned while having improved performance.