公开(公告)号：US09252448B2

公开(公告)日：2016-02-02

申请号：US13929954

申请日：2013-06-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung Pil Yoon ,  Jonghee Han ,  Shin Ae Song ,  Tae Hoon Lim ,  Hyoung-Juhn Kim ,  Jong Hyun Jang ,  Dirk Henkensmeier ,  Eun Ae Cho ,  Suk Woo Nam ,  Seong Ahn Hong ,  Thieu Cam-Anh

IPC: H01M8/12 ,  C04B35/50 ,  C04B35/626

CPC classification number: H01M8/126 ,  C04B35/50 ,  C04B35/62675 ,  C04B35/62685 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3298 ,  C04B2235/77 ,  C04B2235/85 ,  H01M8/1266 ,  H01M2300/0074 ,  H01M2300/0091 ,  Y02E60/521 ,  Y02E60/525 ,  Y02P70/56

Abstract: Provided are a ceria-based composition having an undoped or metal-doped ceria and an undoped or metal-doped bismuth oxide, wherein the undoped or metal-doped bismuth oxide is present in an amount equal to or more than about 10 wt % and less than about 50 wt % based on the total weight of the ceria-based composition, and at least one selected from the ceria and the bismuth oxide is metal-doped. The ceria-based composition may ensure high sintering density even at a temperature significantly lower than the known sintering temperature of about 1400° C., i.e., for example at a temperature of about 1000° C. or lower, and increase ion conductivity as well.

Abstract translation: 提供了一种具有未掺杂或金属掺杂的二氧化铈和未掺杂或金属掺杂的氧化铋的二氧化铈基组合物，其中未掺杂或金属掺杂的氧化铋以等于或大于约10重量％的量存在 相对于二氧化铈基组合物的总重量为约50重量％，并且选自二氧化铈和氧化铋中的至少一种是金属掺杂的。 即使在显着低于约1400℃的已知烧结温度的温度下，即例如在约1000℃或更低的温度下，二氧化铈基组合物也可确保高的烧结密度，并且还增加离子传导性 。