公开(公告)号：US20240239716A1

公开(公告)日：2024-07-18

申请号：US18562171

申请日：2022-05-23

申请人： AMOSENSE CO.,LTD

发明人： Ji Hyung LEE

IPC分类号： C04B41/50 ,  C04B35/584 ,  C04B35/626 ,  C04B35/632 ,  C04B41/00 ,  C04B41/45 ,  C04B41/87 ,  H01J37/32 ,  H01L21/683 ,  H05B3/26

CPC分类号： C04B41/5045 ,  C04B35/584 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/632 ,  C04B41/0036 ,  C04B41/4529 ,  C04B41/5031 ,  C04B41/87 ,  H01J37/32724 ,  H01L21/6833 ,  H05B3/265 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6584 ,  C04B2235/9607 ,  C04B2235/9669 ,  H01J2237/2007

摘要： An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

公开(公告)号：US20240067572A1

公开(公告)日：2024-02-29

申请号：US18451087

申请日：2023-08-16

申请人： Sichuan University

发明人： Jianguo Zhu ,  Hongjiang Li ,  Jie Xing ,  Zhi Tan ,  Lixu Xie

IPC分类号： C04B35/495 ,  C04B35/626 ,  C04B35/628

CPC分类号： C04B35/495 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/62876 ,  C04B2235/5463 ,  C04B2235/96

摘要： The present invention discloses potassium sodium bismuth niobate tantalate zirconate ferrite ceramics with non-stoichiometric Nb5+ and a preparation method therefor. A ceramic powder with a general formula of (K0.45936Na0.51764Bi0.023)(Nb0.89958+0.957xTa0.05742Zr0.04Fe0.003)O3 (−0.01≤x≤0.04) is prepared by a traditional solid phase method; and then piezoelectric ceramics are prepared by traditional electronic ceramic preparation processes such as granulating, molding, binder removal, sintering and silvering test. An excessive amount of Nb5+ doping improves the temperature stability of the ceramics by providing a domain wall pinning effect. This result demonstrates the promise of potassium sodium bismuth niobate tantalate zirconate ferrite ceramics for a wide range of applications, including sensors, actuators, and other electronic devices.

公开(公告)号：US11858851B2

公开(公告)日：2024-01-02

申请号：US17258983

申请日：2019-07-11

申请人： KYOCERA Corporation

发明人： Shuzo Iwashita

IPC分类号： C04B35/19 ,  C04B35/495 ,  C04B35/626 ,  C04B35/64 ,  C30B29/30 ,  G02B5/08

CPC分类号： C04B35/19 ,  C04B35/6262 ,  C04B35/62665 ,  C04B35/62675 ,  C04B35/64 ,  C30B29/30 ,  C04B2235/3255 ,  C04B2235/3472 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6567 ,  C04B2235/77 ,  C04B2235/9607 ,  G02B5/0808

摘要： A complex according to the present disclosure contains a β-eucryptite crystal phase and a lithium tantalate crystal phase. In a temperature range of 0 to 50° C., a coefficient of thermal expansion calculated for each 1° C. is within 0±1 ppm/K. Calcium is contained in the lithium tantalate crystal phase. The volume ratio of the β-eucryptite crystal phase to the lithium tantalate crystal phase is from 90:10 to 99.5:0.5.

公开(公告)号：US11680021B2

公开(公告)日：2023-06-20

申请号：US16978147

申请日：2018-03-13

申请人： TDK Electronics AG

发明人： Manfred Schweinzger

IPC分类号： C04B35/499 ,  C04B35/626

CPC分类号： C04B35/499 ,  C04B35/62675 ,  C04B2235/3206 ,  C04B2235/3234 ,  C04B2235/3255 ,  C04B2235/612 ,  C04B2235/6587 ,  C04B2235/768 ,  C04B2235/786 ,  C04B2235/79 ,  C04B2235/81

摘要： A polycrystalline ceramic solid and a method for producing a polycrystalline ceramic solid are disclosed. In an embodiment a polycrystalline ceramic solid includes a main phase with a composition of the general formula: (1-y)Pba(MgbNbc)O3-e+yPbaTidO3 with 0.055≤y≤0.065, 0.95≤a≤1.02, 0.29≤b≤0.36, 0.63≤c≤0.69, 0.9≤d≤1.1, and 0≤e≤0.1, and optionally one or more secondary phases, wherein, in each section through the solid, a proportion of the secondary phases relative to any given cross-sectional area through the solid is less than or equal to 0.5 percent, or wherein the solid is free of the secondary phases.

公开(公告)号：US20190194076A1

公开(公告)日：2019-06-27

申请号：US16329519

申请日：2017-08-03

申请人： Shandong Sinocera Functional Material Co., Ltd.

发明人： Aimin Yang ,  Xuekui Mo ,  Xibin Song

IPC分类号： C04B35/486 ,  C04B35/626

CPC分类号： C04B35/486 ,  C04B35/62645 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62695 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3241 ,  C04B2235/3246 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/443 ,  C04B2235/5409 ,  C04B2235/5445 ,  C04B2235/6022 ,  C04B2235/61 ,  C04B2235/658 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2235/9661

摘要： A black zirconia sintered body is obtained by processing and forming a powder for the black zirconia sintered body, and then sintering the same at a high temperature and normal pressure in the atmosphere. The powder for the black zirconia sintered body is prepared by a hydrothermal synthesis method using a soluble zirconium salt, a soluble yttrium salt and a color former as raw materials, wherein the molar ratio of the soluble zirconium salt, the soluble yttrium salt and the color former is 90-95:1-5:1-9. The black zirconia sintered body can be used in ceramic processes.

公开(公告)号：US20180327324A1

公开(公告)日：2018-11-15

申请号：US16040785

申请日：2018-07-20

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching HSIAO ,  Wen-Po TU ,  Chu-Pi JENG ,  Mu-Hsi SUNG

IPC分类号： C04B35/573 ,  C04B35/626 ,  C04B35/628 ,  C01B32/956 ,  C30B35/00 ,  C30B23/00 ,  C30B29/36

CPC分类号： C04B35/573 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62839 ,  C04B35/62897 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/441 ,  C04B2235/48 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

摘要： A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

公开(公告)号：US10079106B2

公开(公告)日：2018-09-18

申请号：US15410046

申请日：2017-01-19

申请人： Murata Manufacturing Co., Ltd.

发明人： Shoichiro Suzuki ,  Takafumi Okamoto

IPC分类号： H01G4/30 ,  H01G4/12 ,  H01G4/012 ,  C04B35/49 ,  H01G4/232

CPC分类号： H01G4/30 ,  B32B18/00 ,  C04B35/4682 ,  C04B35/49 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/6342 ,  C04B35/638 ,  C04B2235/3215 ,  C04B2235/3232 ,  C04B2235/3234 ,  C04B2235/3236 ,  C04B2235/3239 ,  C04B2235/3244 ,  C04B2235/3248 ,  C04B2235/3249 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/326 ,  C04B2235/3262 ,  C04B2235/428 ,  C04B2235/442 ,  C04B2235/6025 ,  C04B2235/652 ,  C04B2235/6582 ,  C04B2235/6588 ,  C04B2235/768 ,  C04B2235/79 ,  C04B2235/96 ,  C04B2237/346 ,  C04B2237/348 ,  C04B2237/68 ,  C04B2237/704 ,  H01B3/12 ,  H01G4/012 ,  H01G4/1227 ,  H01G4/1245 ,  H01G4/232

摘要： A multilayer ceramic capacitor that includes a ceramic laminated body having dielectric layers and internal electrodes at the interfaces between the dielectric layers, and external electrodes on the outer surface of the ceramic laminated body. The dielectric layers contain, as their main constituent, a perovskite-type compound including Ba, Ti, Zr, and M. M is at least one element of Ta, Nb, V, and W. The dielectric layers further contain Mn and Si as additive constituents. With respect to the total amount of Ti, Zr, and M, 40 mol %

公开(公告)号：US10059631B2

公开(公告)日：2018-08-28

申请号：US15386749

申请日：2016-12-21

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Ta-Ching Hsiao ,  Wen-Po Tu ,  Chu-Pi Jeng ,  Mu-Hsi Sung

IPC分类号： C04B35/573 ,  C04B35/628 ,  C04B35/626 ,  C01B31/36 ,  C30B23/00 ,  C30B29/36

CPC分类号： C04B35/573 ,  C01B32/956 ,  C04B35/6267 ,  C04B35/62675 ,  C04B35/6268 ,  C04B35/62839 ,  C04B35/62897 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/422 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/441 ,  C04B2235/48 ,  C04B2235/5427 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6584 ,  C30B23/00 ,  C30B29/36 ,  C30B35/007

摘要： A method for manufacturing micropowder is provided, which includes (a) mixing a silicon precursor and a carbon precursor to form a mixture, and heating and keeping the mixture at 1600° C. to 1800° C. under a vacuum and non-oxygen condition for 120 to 180 minutes to form a silicon carbide powder; and (b) heating and keeping the silicon carbide powder at 1900° C. to 2100° C. under non-oxygen condition for 5 to 15 minutes, and then cooling and keeping the silicon carbide powder at 1800° C. to 2000° C. under the non-oxygen condition for 5 to 15 minutes to form micropowder, wherein the micropowder includes a silicon carbide core covered by a carbon film.

公开(公告)号：US09966190B2

公开(公告)日：2018-05-08

申请号：US15466316

申请日：2017-03-22

申请人： TDK CORPORATION

发明人： Dan Sakurai ,  Nobuto Morigasaki ,  Tatsuya Ishii ,  Takuma Ariizumi ,  Shinsuke Hashimoto ,  Yasuhiro Ito

IPC分类号： H01G4/12 ,  C04B35/49 ,  C04B35/468 ,  H01G4/248 ,  H01G4/30

CPC分类号： H01G4/1245 ,  C04B35/4682 ,  C04B35/49 ,  C04B35/6263 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/6342 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3249 ,  C04B2235/3262 ,  C04B2235/3418 ,  C04B2235/442 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/6584 ,  C04B2235/663 ,  C04B2235/75 ,  C04B2235/768 ,  C04B2237/346 ,  C04B2237/68 ,  C04B2237/704 ,  H01G4/248 ,  H01G4/30

摘要： A dielectric ceramic composition has good characteristics even under the high electric field intensity, and particularly good IR characteristic and the high temperature accelerated lifetime. The dielectric ceramic composition has a main component having a perovskite type compound shown by a compositional formula (Ba1-x-ySrxCay)m(Ti1-zZrz)O3, a first sub component having oxides of a rare earth element R, a second sub component as a sintering agent, wherein the dielectric particles has dielectric particles having high diffusion rate of the rare earth element, preferably of a complete solid solution particle, and when a concentration of Ti atom in the diffusion phase is 100 atom %, then an average concentration of the rare earth element R in the diffusion phase is 5 atom % or more, and an average concentration of Zr in the diffusion phase is 10 atom % or more.

公开(公告)号：US09957604B2

公开(公告)日：2018-05-01

申请号：US14787751

申请日：2015-03-18

申请人： Sumitomo Electric Industries, Ltd.

发明人： Miki Miyanaga ,  Kenichi Watatani ,  Koichi Sogabe

IPC分类号： C23C14/34 ,  C23C14/08 ,  H01L21/02 ,  C04B35/01 ,  C04B35/626 ,  H01L29/786 ,  B28B3/00 ,  C04B35/64 ,  C23C14/35 ,  H01L29/22

CPC分类号： C23C14/3414 ,  B28B3/003 ,  C04B35/01 ,  C04B35/6261 ,  C04B35/62675 ,  C04B35/62685 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/326 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3298 ,  C04B2235/3418 ,  C04B2235/3427 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/602 ,  C04B2235/6567 ,  C04B2235/6583 ,  C04B2235/661 ,  C04B2235/72 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/80 ,  C23C14/08 ,  C23C14/35 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/78609 ,  H01L29/78681 ,  H01L29/7869

摘要： There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.