Solid-state image pickup device and radiation image pickup device suitable for use in a flat panel detector
    1.
    发明授权
    Solid-state image pickup device and radiation image pickup device suitable for use in a flat panel detector 失效
    适用于平板检测器的固态摄像装置和放射摄像装置

    公开(公告)号:US07535506B2

    公开(公告)日:2009-05-19

    申请号:US10537907

    申请日:2004-02-10

    IPC分类号: H04N3/14 H01L27/00

    摘要: A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

    摘要翻译: 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方,并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外,根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件,并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。

    Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system
    2.
    发明授权
    Radiographic imaging substrate, radiographic imaging apparatus, and radiographic imaging system 有权
    射线照相成像基片,放射成像装置和放射成像系统

    公开(公告)号:US07465933B2

    公开(公告)日:2008-12-16

    申请号:US11957843

    申请日:2007-12-17

    IPC分类号: G01T1/20 H01L27/146

    摘要: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating, With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electricity charged in a manufacturing process.

    摘要翻译: 一种放射线摄影成像装置,包括:光电转换基板,包括像素区域,其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件, 用于向光电转换元件施加偏压的偏置线,用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件,用于将辐射转换成能够由光电转换元件检测的光,所述波长转换元件根据包括像素区域的区域设置; 以及连接布线,其具有连接到相同类型的偏置线,信号线和栅极线的至少多条线的光电转换层,其中连接布线的至少一部分布置在 绝缘基板和绝缘体的边缘。通过这种布置,可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板,即使在基板是电的情况下,也不会导致静电导致的装置性能和装置破坏的劣化 在制造过程中充电。

    RADIOGRAPHIC IMAGING SUBSTRATE, RADIOGRAPHIC IMAGING APPARATUS, AND RADIOGRAPHIC IMAGING SYSTEM
    3.
    发明申请
    RADIOGRAPHIC IMAGING SUBSTRATE, RADIOGRAPHIC IMAGING APPARATUS, AND RADIOGRAPHIC IMAGING SYSTEM 失效
    放射成像基板,放射成像装置和放射成像系统

    公开(公告)号:US20070145285A1

    公开(公告)日:2007-06-28

    申请号:US11683184

    申请日:2007-03-07

    IPC分类号: G01T1/20

    摘要: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arranged between the region on the insulating substrate and an edge of the insulating substrate. With this arrangement, it becomes possible to provide a panel for a radiographic imaging apparatus and a radiographic imaging apparatus free from deterioration in device performance and device destruction caused by a static electricity even if a substrate is electrically charged in a manufacturing process.

    摘要翻译: 一种放射线摄影成像装置,包括:光电转换基板,包括像素区域,其中排列有由光电转换元件形成的多个像素和连接到形成在绝缘基板上的矩阵中的光电转换元件的开关元件, 用于向光电转换元件施加偏压的偏置线,用于向开关元件提供驱动信号的栅极线和用于读取在光电转换元件中转换的电荷的信号线; 波长转换元件,用于将辐射转换成能够由光电转换元件检测的光,所述波长转换元件根据包括像素区域的区域设置; 以及连接布线,其具有连接到相同类型的偏置线,信号线和栅极线的至少多条线的光电转换层,其中连接布线的至少一部分布置在 绝缘基板和绝缘基板的边缘。 利用这种布置,即使在制造过程中基板被充电,也可以提供一种用于放射线照相成像装置和放射线照相成像装置的面板,其不会因静电而导致的装置性能和装置破坏的劣化。

    Radiation image pickup device
    4.
    发明申请

    公开(公告)号:US20060249763A1

    公开(公告)日:2006-11-09

    申请号:US10538013

    申请日:2004-02-10

    IPC分类号: H01L31/113

    CPC分类号: H01L27/14658 H04N5/32

    摘要: In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

    Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system
    5.
    发明授权
    Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system 有权
    摄像装置及其制造方法,放射线摄像装置和放射线摄像系统

    公开(公告)号:US07126127B2

    公开(公告)日:2006-10-24

    申请号:US10954194

    申请日:2004-10-01

    IPC分类号: G01T1/24

    CPC分类号: H01L27/14643 H01L27/14676

    摘要: In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

    摘要翻译: 在图像拾取装置中,将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态 底物。 图像拾取装置包括栅极配线,多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线,多个像素的薄膜晶体管的源电极或漏电极布置在其上 在与该方向不同的方向上共同连接在基板上。 保护层布置在薄膜晶体管,栅极布线和信号布线上。 保护层至少在同一时间形成。 然后,在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。

    IMAGE PICKUP APPARATUS AND RADIATIOIN IMAGE PICKUP APPARATUS
    7.
    发明申请
    IMAGE PICKUP APPARATUS AND RADIATIOIN IMAGE PICKUP APPARATUS 有权
    图像拾取装置和放大图像拾取装置

    公开(公告)号:US20090230311A1

    公开(公告)日:2009-09-17

    申请号:US12474404

    申请日:2009-05-29

    IPC分类号: G01T1/24 H01L27/00

    摘要: To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

    摘要翻译: 为了改善传感器复位方法,从而实现读取运动图像的高速率,本发明提供一种图像拾取装置和放射线图像拾取装置,包括:沿行和列方向排列在基板上的多个像素,每个 像素,具有转换元件和转印开关元件; 在行方向上与多个所述转印开关元件连接的驱动配线; 以及在行方向上连接到多个转换元件的转换元件布线,其中复位开关元件设置在转换元件布线和用于提供用于复位转换元件的复位电压的复位布线之间,偏置开关元件 设置在转换元件布线和用于提供用于操作转换元件的偏置电压的偏置布线之间。

    Image pickup apparatus and radiation image pickup apparatus
    8.
    发明授权
    Image pickup apparatus and radiation image pickup apparatus 失效
    图像拾取装置和放射线图像拾取装置

    公开(公告)号:US07557355B2

    公开(公告)日:2009-07-07

    申请号:US11229630

    申请日:2005-09-20

    IPC分类号: H01L27/146

    摘要: To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

    摘要翻译: 为了改善传感器复位方法,从而实现读取运动图像的高速率,本发明提供一种图像拾取装置和放射线图像拾取装置,包括:沿行和列方向排列在基板上的多个像素,每个 像素,具有转换元件和转印开关元件; 在行方向上与多个所述转印开关元件连接的驱动配线; 以及在行方向上连接到多个转换元件的转换元件布线,其中复位开关元件设置在转换元件布线和用于提供用于复位转换元件的复位电压的复位布线之间,偏置开关元件 设置在转换元件布线和用于提供用于操作转换元件的偏置电压的偏置布线之间。

    Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system
    9.
    发明授权
    Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system 失效
    摄像装置及其制造方法,放射线摄像装置和放射线摄像系统

    公开(公告)号:US07547890B2

    公开(公告)日:2009-06-16

    申请号:US11486102

    申请日:2006-07-14

    IPC分类号: G01T1/24

    CPC分类号: H01L27/14643 H01L27/14676

    摘要: In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

    摘要翻译: 在图像拾取装置中,将与入射电磁波进行转换的半导体转换元件和电连接的半导体转换元件和与半导体变换元件连接的薄膜晶体管的多个像素配置成二维状态 底物。 图像拾取装置包括栅极配线,多个像素排列的多个像素的薄膜晶体管的栅电极共同连接到该栅极布线,多个像素的薄膜晶体管的源电极或漏电极布置在其上 在与该方向不同的方向上共同连接在基板上。 保护层布置在薄膜晶体管,栅极布线和信号布线上。 保护层至少在同一时间形成。 然后,在其中形成有半导体转换元件的区域的至少一部分或全部中去除保护层。

    Radiation image pickup device
    10.
    发明授权
    Radiation image pickup device 失效
    辐射摄像装置

    公开(公告)号:US07541617B2

    公开(公告)日:2009-06-02

    申请号:US10538013

    申请日:2004-02-10

    CPC分类号: H01L27/14658 H04N5/32

    摘要: In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

    摘要翻译: 一种放射线摄像装置,包括:用于将辐射转换为电信号的传感器元件; 和连接到传感器元件的薄膜晶体管,连接到薄膜晶体管的传感器元件的电极设置在薄膜晶体管的上方,并且薄膜晶体管具有顶栅型结构,其中半导体层, 栅极绝缘层和栅极电极层依次层叠在基板上,使得薄膜晶体管的沟道部分被栅极电极保护,从而提供稳定的TFT特性,而不会导致任何TFT元件的导通 通过对应于来自传感器电极的输出的电位的波动对后门效应,从而大大提高图像质量。