公开(公告)号：US20240339485A1

公开(公告)日：2024-10-10

申请号：US18631344

申请日：2024-04-10

申请人： Taiwan-Asia Semiconductor Corporation

发明人： Di-Bao WANG ,  Chuan-Wei CHEN

IPC分类号： H01L27/146

CPC分类号： H01L27/14687 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685

摘要： The present invention provides an integrating method for optoelectronic elements and circuits, including: providing a silicon wafer including a plurality of circuit structures; providing a plurality of optoelectronic element dies, and each optoelectronic element die including a substrate and an optoelectronic element structure; performing a die-to-wafer bonding process so that one optoelectronic element die is correspondingly bonded to one circuit structure of the silicon wafer through the optoelectronic element structure; performing a compression over-molding process to encapsulate the optoelectronic element dies and a surface of the silicon wafer by a molding material; performing a grinding and polishing process to remove an unnecessary portion of the molding material and an unnecessary portion of the substrate of each optoelectronic element die; and performing a dicing process to form a plurality of integrated structures with the optoelectronic elements and the circuits.

公开(公告)号：US12111261B2

公开(公告)日：2024-10-08

申请号：US18330295

申请日：2023-06-06

申请人： Quantum-Si Incorporated

发明人： Jonathan M. Rothberg ,  Keith G. Fife ,  David M. Boisvert

IPC分类号： G01N21/64 ,  C12Q1/6869 ,  G01S7/4865 ,  H01L27/146 ,  H01L27/148 ,  H04N25/77

CPC分类号： G01N21/6428 ,  C12Q1/6869 ,  G01N21/64 ,  G01N21/6408 ,  G01S7/4865 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14812 ,  H04N25/77 ,  G01N21/6458

摘要： An integrated circuit includes a photodetection region configured to receive incident photons. The photodetection region is configured to produce a plurality of charge carriers in response to the incident photons. The integrated circuit includes at least one charge carrier storage region. The integrated circuit also includes a charge carrier segregation structure configured to selectively direct charge carriers of the plurality of charge carriers directly into the at least one charge carrier storage region based upon times at which the charge carriers are produced.

公开(公告)号：US12107102B2

公开(公告)日：2024-10-01

申请号：US18363296

申请日：2023-08-01

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Shou-Chian Hsu

IPC分类号： H01L27/146 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L27/14623 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L21/56 ,  H01L24/95

摘要： Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side. A first side of an optically transmissive lid may be coupled to the second side of the semiconductor die through one or more dams. The packages may also include a light block material around the semiconductor package extending from the first side of the semiconductor die to a second side of the optically transmissive lid. The package may include an opening in the light block material on the second side of the optically transmissive lid that substantially corresponds with an active area of the semiconductor die.

公开(公告)号：US20240297201A1

公开(公告)日：2024-09-05

申请号：US18609373

申请日：2024-03-19

申请人： SUMCO Corporation

发明人： Takeshi Kadono ,  Kazunari Kurita

IPC分类号： H01L27/146 ,  C23C14/48 ,  C30B25/18 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/265 ,  H01L21/322 ,  H01L29/167 ,  H01L29/36

CPC分类号： H01L27/14687 ,  C23C14/48 ,  C30B25/186 ,  C30B25/20 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02658 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/3221 ,  H01L27/14689 ,  H01L29/167 ,  H01L29/36

摘要： Provided is a semiconductor epitaxial wafer having metal contamination reduced by achieving higher gettering capability, a method of producing the semiconductor epitaxial wafer, and a method of producing a solid-state image sensing device using the semiconductor epitaxial wafer. The method of producing a semiconductor epitaxial wafer 100 includes a first step of irradiating a semiconductor wafer 10 containing at least one of carbon and nitrogen with cluster ions 16 thereby forming a modifying layer 18 formed from a constituent element of the cluster ions 16 contained as a solid solution, in a surface portion of the semiconductor wafer 10; and a second step of forming a first epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10.

公开(公告)号：US12068351B2

公开(公告)日：2024-08-20

申请号：US18322239

申请日：2023-05-23

申请人： CANON KABUSHIKI KAISHA

发明人： Mineo Shimotsusa

IPC分类号： H01L27/146 ,  H01L31/09

CPC分类号： H01L27/14636 ,  H01L27/14601 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/09 ,  H01L27/14621

摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.

公开(公告)号：US20240274631A1

公开(公告)日：2024-08-15

申请号：US18643876

申请日：2024-04-23

申请人： Lodestar Licensing Group LLC

发明人： Loriston Ford ,  Ulrich C. Boettiger

IPC分类号： H01L27/146

CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： A pixel cell with a photosensitive region formed in association with a substrate, a color filter formed over the photosensitive region, the color filter comprising a first material layer and a second material layer formed in association with the first shaping material layer.

公开(公告)号：US12061420B2

公开(公告)日：2024-08-13

申请号：US17197481

申请日：2021-03-10

申请人： IMASENIC Advanced Imaging S.L.

发明人： Renato Turchetta

IPC分类号： G03F7/00 ,  H01L27/146

CPC分类号： G03F7/70475 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14687

摘要： A sensor fabricated from a plurality of layers on a semiconductor wafer. The sensor comprises a plurality of sensor elements arranged in stitching blocks and having a plurality of vertically arranged read-out lines, a plurality of vertically arranged select/reset lines, and a plurality of horizontally arranged select/reset lines, running from a right-hand edge to an oppositely disposed left hand edge and being connected to ones of the plurality of vertically arranged select/reset lines, plurality of read-out circuits connected to the plurality of vertically arranged read-out lines, and ones of the plurality of vertically arranged read-out lines swerve at one of the bottom or top edges of the stitching blocks, such that ones of the plurality of vertically arranged read-out lines in a first one of the plurality of stitching blocks connect to a displaced one of the vertical lines in a second abutting one of the plurality of stitching blocks.

公开(公告)号：US12051711B2

公开(公告)日：2024-07-30

申请号：US18363289

申请日：2023-08-01

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Shou-Chian Hsu

IPC分类号： H01L27/146 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L27/14623 ,  H01L27/14618 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687 ,  H01L21/56 ,  H01L24/95

摘要： Implementations of semiconductor packages may include: a semiconductor die having a first side and a second side. A first side of an optically transmissive lid may be coupled to the second side of the semiconductor die through one or more dams. The packages may also include a light block material around the semiconductor package extending from the first side of the semiconductor die to a second side of the optically transmissive lid. The package may include an opening in the light block material on the second side of the optically transmissive lid that substantially corresponds with an active area of the semiconductor die.

公开(公告)号：US12034028B2

公开(公告)日：2024-07-09

申请号：US17659885

申请日：2022-04-20

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Shou-Chian Hsu

IPC分类号： H01L27/14 ,  H01L27/146

CPC分类号： H01L27/14632 ,  H01L27/14618 ,  H01L27/14685 ,  H01L27/14687 ,  H01L2224/12105 ,  H01L2224/13 ,  H01L2924/181

摘要： Implementations of image sensor packages may include an image sensor chip, a first layer including an opening therethrough coupled to a first side of the image sensor chip, and a optically transmissive cover coupled to the first layer. The optically transmissive cover, the first layer, and the image sensor chip may form a cavity within the image sensor. The image sensor package may also include at least one electrical contact coupled to a second side of the image sensor chip opposing the first side and an encapsulant coating an entirety of the sidewalls of the image sensor package.

公开(公告)号：US20240213398A1

公开(公告)日：2024-06-27

申请号：US18545026

申请日：2023-12-19

申请人： COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

发明人： Fabian ROL ,  Amélie DUSSAIGNE

IPC分类号： H01L33/00 ,  H01L27/146 ,  H01L27/15 ,  H01L33/32

CPC分类号： H01L33/0075 ,  H01L27/14687 ,  H01L27/153 ,  H01L33/32 ,  H01L21/3065

摘要： A method for manufacturing a growth substrate adapted to produce by epitaxy a matrix of diodes based on InGaN, including the following steps of:



producing a crystalline stack including, from a conductive buffer layer: a lower layer based on doped GaN; then a separation intermediate layer, based on InGaN; then an upper layer (14) based on AlGaN;
producing mesas of three categories M1, M2, M3, by localised etching of the crystalline stack;
eliminating, by etching, the upper portion of at least the mesas M3, the upper portion of the mesas M1 being preserved; then
non-photo-assisted electrochemically porosifying the lower portions of only the mesas M1 and M3, the lower portion of the mesas M2 being non-porosified.