公开(公告)号：US20160079004A1

公开(公告)日：2016-03-17

申请号：US14853493

申请日：2015-09-14

Applicant: Kemet Electronics Corporation

Inventor： Yuri Freeman ,  Steven C. Hussey ,  Jimmy Dale Cisson ,  Philip M. Lessner

IPC: H01G9/012 ,  H01G13/00 ,  H01G9/10 ,  H01G9/052

CPC classification number: H01G9/012 ,  H01G9/0036 ,  H01G9/0425 ,  H01G9/052 ,  H01G9/10 ,  H01G9/14 ,  H01G9/15 ,  H01G13/003

Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 μC/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.

Abstract translation: 详细描述了改进的电容器和形成改进的电容器的方法。 该方法包括用粉末电荷不超过40,000μC/ g的钽粉末形成钽阳极; 在不大于100V的地层电压下通过阳极氧化在阳极上形成电介质; 以及在所述电介质上形成导电聚合物阴极，其中所述电容器具有高于所述地层电压的击穿电压。

公开(公告)号：US10062519B2

公开(公告)日：2018-08-28

申请号：US14853493

申请日：2015-09-14

Applicant: Kemet Electronics Corporation

Inventor： Yuri Freeman ,  Steven C. Hussey ,  Jimmy Dale Cisson ,  Philip M. Lessner

IPC: H01G9/012 ,  H01G9/052 ,  H01G13/00 ,  H01G9/10 ,  H01G9/00 ,  H01G9/042 ,  H01G9/15 ,  H01G9/14

CPC classification number: H01G9/012 ,  H01G9/0036 ,  H01G9/0425 ,  H01G9/052 ,  H01G9/10 ,  H01G9/14 ,  H01G9/15 ,  H01G13/003

Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 μC/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.