公开(公告)号：US06897130B2

公开(公告)日：2005-05-24

申请号：US10318094

申请日：2002-12-13

申请人： Koji Miyauchi ,  Tatsushi Owada

发明人： Koji Miyauchi ,  Tatsushi Owada

IPC分类号： H01L21/00 ,  H01L21/324 ,  H01L21/20 ,  H01L21/26 ,  H01L21/36 ,  H01L21/42

CPC分类号： H01L21/324 ,  H01L21/67115

摘要： The present invention provides a method for thermal processing a semiconductor wafer wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash discharge lamp after preheating the semiconductor wafer to a predetermined temperature by means of preheating means, the preheating is performed at a preheating temperature capable of controlling that the maximum tension of the semiconductor wafer when heated by the flash radiation means is to be less than the tense strength of the semiconductor wafer itself.

摘要翻译： 本发明提供一种用于热处理半导体晶片的方法，其中通过借助于预热装置将半导体晶片预热到预定温度之后，借助闪光放电灯构成的闪光辐射装置对半导体晶片进行热处理，预热为 在能够控制由闪光辐射装置加热时半导体晶片的最大张力小于半导体晶片本身的紧张强度的预热温度下进行。