公开(公告)号：US08603854B2

公开(公告)日：2013-12-10

申请号：US13872471

申请日：2013-04-29

Applicant: Korea Institute of Science and Technology

Inventor： Sang-Soo Lee ,  Woojin Jeon

IPC: H01L21/00

CPC classification number: H01L45/1608 ,  B82Y30/00 ,  H01B1/22 ,  H01B1/24 ,  H01L45/04 ,  H01L45/145 ,  H01L45/1683

Abstract: Disclosed are methods for preparing a resistive random-access memory (ReRAM) based on resistive switching using a resistance-switchable conductive filler. When a resistance-switchable conductive filler prepared by coating a conductive filler with a material whose resistance is changeable is mixed with a dielectric material, the dielectric material is given the resistive switching characteristics without losing its inherent properties. Therefore, various resistance-switchable materials having various properties can be prepared by mixing the resistance-switchable conductive filler with different dielectric materials. The resulting resistance-switchable material shows resistive switching characteristics comparable to those of the existing metal oxide film-based resistance-switchable materials. Accordingly, a ReRAM device having the inherent properties of a dielectric material can be prepared using the resistance-switchable conductive filler.

Abstract translation: 公开了基于使用电阻切换导电填料的电阻式开关来制备电阻随机存取存储器（ReRAM）的方法。 当通过用电阻可变的材料涂覆导电填料制备的电阻可切换导电填料与电介质材料混合时，电介质材料被赋予电阻开关特性而不失去其固有特性。 因此，可以通过将电阻可切换导电填料与不同介电材料混合来制备具有各种性能的各种电阻切换材料。 所得到的电阻切换材料显示出与现有的基于金属氧化物膜的电阻切换材料相当的电阻开关特性。 因此，可以使用电阻可切换导电填料制备具有介电材料固有性质的ReRAM器件。