公开(公告)号：US20230075253A1

公开(公告)日：2023-03-09

申请号：US17866937

申请日：2022-07-18

Applicant: LG DISPLAY CO., LTD.

Inventor： Yong-Il KIM ,  Byungjin KIM ,  Jinkwon PARK ,  Wooseok JEONG

IPC: H01L51/52 ,  H01L27/32

Abstract: An electroluminescent display device includes a substrate divided into a display area and a non-display area, a first light-blocking layer and a data line disposed on the substrate in the display area, a first buffer layer disposed on the first light-blocking layer and the data line, a semiconductor layer disposed on an upper portion of the first buffer layer and made of an oxide semiconductor, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a protective layer and a first planarization layer disposed on an upper portion of the gate electrode, a drain electrode disposed on the protective layer exposed by removing a partial area of the first planarization layer, a second planarization layer disposed on the drain electrode and the first planarization layer, and a light-emitting element disposed on an upper portion of the second planarization layer and including an anode, a light-emitting part, and a cathode.

公开(公告)号：US20230077098A1

公开(公告)日：2023-03-09

申请号：US17875706

申请日：2022-07-28

Applicant: LG DISPLAY CO., LTD.

Inventor： Byungjin KIM

IPC: H01L51/52 ,  H01L27/32

Abstract: An electroluminescent display device includes a substrate including a display area and a non-display area including a gate-in-panel (GIP) area disposed outside the display area, an oxide thin-film transistor disposed above the substrate, a planarization layer disposed above the oxide thin-film transistor, an anode disposed above the planarization layer, a bank disposed above the planarization layer and including an opening portion through which a part of the anode is exposed, a plurality of dams disposed outside the GIP area and configured by the planarization layer and the bank, a buffer layer disposed above the bank and the dam and made of silicon nitride, a light-emitting part disposed on the exposed anode and the buffer layer, and a cathode disposed on the light-emitting part, thereby inhibiting hydrogen from entering an oxide thin-film transistor and improve properties and reliability of the transistor.

公开(公告)号：US20230076860A1

公开(公告)日：2023-03-09

申请号：US17866931

申请日：2022-07-18

Applicant: LG DISPLAY CO., LTD.

Inventor： Jungcheol SHIN ,  Byungjin KIM ,  GiSang HONG ,  YoungWook LEE ,  Jinkwon PARK

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a substrate including a display area and a non-display area; a first overcoating layer disposed on the substrate and including a base portion and a protruding portion protruding from the base portion; a first hydrogen blocking layer disposed on a top surface of the protruding portion in the display area; a first electrode covering the base portion and the first hydrogen blocking layer; a bank disposed on a part of the first electrode; an organic layer disposed on the first electrode and the bank; and a second electrode disposed on the organic layer.