DISPLAY DEVICE
    1.
    发明申请

    公开(公告)号:US20230076860A1

    公开(公告)日:2023-03-09

    申请号:US17866931

    申请日:2022-07-18

    Abstract: A display device includes a substrate including a display area and a non-display area; a first overcoating layer disposed on the substrate and including a base portion and a protruding portion protruding from the base portion; a first hydrogen blocking layer disposed on a top surface of the protruding portion in the display area; a first electrode covering the base portion and the first hydrogen blocking layer; a bank disposed on a part of the first electrode; an organic layer disposed on the first electrode and the bank; and a second electrode disposed on the organic layer.

    ELECTROLUMINESCENT DISPLAY DEVICE

    公开(公告)号:US20230075253A1

    公开(公告)日:2023-03-09

    申请号:US17866937

    申请日:2022-07-18

    Abstract: An electroluminescent display device includes a substrate divided into a display area and a non-display area, a first light-blocking layer and a data line disposed on the substrate in the display area, a first buffer layer disposed on the first light-blocking layer and the data line, a semiconductor layer disposed on an upper portion of the first buffer layer and made of an oxide semiconductor, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a protective layer and a first planarization layer disposed on an upper portion of the gate electrode, a drain electrode disposed on the protective layer exposed by removing a partial area of the first planarization layer, a second planarization layer disposed on the drain electrode and the first planarization layer, and a light-emitting element disposed on an upper portion of the second planarization layer and including an anode, a light-emitting part, and a cathode.

    DISPLAY DEVICE
    3.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240222340A1

    公开(公告)日:2024-07-04

    申请号:US18240274

    申请日:2023-08-30

    Abstract: A display device includes a thin-film transistor disposed on a substrate including an active layer, a gate electrode, a first electrode pattern, and a second electrode pattern; an insulating layer is disposed on the thin-film transistor; a barrier layer is disposed on the insulating layer; a planarization layer is disposed on the barrier layer; and a first electrode is disposed on the planarization layer, wherein the barrier layer is electrically connected to the first electrode pattern through the first electrode.

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