公开(公告)号：US11004991B2

公开(公告)日：2021-05-11

申请号：US15904030

申请日：2018-02-23

Applicant: LG ELECTRONICS INC.

Inventor： Younggu Do ,  Sungjin Kim ,  Hyungwook Choi

IPC: H01L31/04 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0376

Abstract: Provided is a method of manufacturing a photovoltaic solar cell, including: forming a first conductivity type region that contains a first conductivity dopant, on one surface of a semiconductor substrate and an opposite surface that is opposite to the one surface; removing the first conductivity type region formed on the opposite surface of the semiconductor substrate by performing dry etching; and forming a second conductivity type region that contains a second conductivity type dopant, on the opposite surface of the semiconductor substrate.