公开(公告)号：US20220310894A1

公开(公告)日：2022-09-29

申请号：US17655174

申请日：2022-03-17

Applicant: Lextar Electronics Corporation

Inventor： Hsin-Chuan WANG ,  Tzong-Liang TSAI ,  Hsiu-Mei CHOU ,  Chin-Hung LUO

IPC: H01L33/62 ,  H01L33/32

Abstract: The disclosure provides a light emitting diode structure, including a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, a semiconductor contacting layer, a first conductive layer and a second conductive layer. The first semiconductor layer is disposed on the substrate. The first semiconductor includes a first thickness structure and a second thickness structure, in which the first thickness structure is thicker than the second thickness structure. The light emitting layer is disposed on the first thickness structure. The second semiconductor layer is disposed on the light emitting layer The semiconductor contacting layer is disposed on the second thickness structure, in which the vertical projections of the semiconductor contacting layer and the light emitting layer on the substrate don't overlap nor contact. A doping type of the semiconductor contacting layer is the same as the first semiconductor layer.