公开(公告)号：US20120326250A1

公开(公告)日：2012-12-27

申请号：US13168477

申请日：2011-06-24

申请人： MICHAEL C. GAIDIS ,  JANUSZ J. NOWAK ,  DANIEL C. WORLEDGE

发明人： MICHAEL C. GAIDIS ,  JANUSZ J. NOWAK ,  DANIEL C. WORLEDGE

IPC分类号： H01L29/82 ,  H01L21/8239

CPC分类号： H01L43/12 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/307 ,  H01L43/08

摘要： Embodiments are directed to STT MRAM devices. One embodiment of an STT MRAM device includes a reference layer, a tunnel barrier layer, a free layer and one or more conductive vias. The reference layer is configured to have a fixed magnetic moment. In addition, the tunnel barrier layer is configured to enable electrons to tunnel between the reference layer and the free layer through the tunnel barrier layer. The free layer is disposed beneath the tunnel barrier layer and is configured to have an adaptable magnetic moment for the storage of data. The conductive via is disposed beneath the free layer and is connected to an electrode. Further, the conductive via has a width that is smaller than a width of the free layer such that a width of an active STT area for the storage of data in the free layer is defined by the width of the conductive via.

摘要翻译： 实施例针对STT MRAM设备。 STT MRAM器件的一个实施例包括参考层，隧道势垒层，自由层和一个或多个导电通孔。 参考层被配置为具有固定的磁矩。 此外，隧道势垒层被配置为使得电子能够通过隧道势垒层在参考层和自由层之间隧穿。 自由层设置在隧道势垒层之下，并被配置为具有用于存储数据的适应性磁矩。 导电通孔设置在自由层下方并连接到电极。 此外，导电通孔的宽度小于自由层的宽度，使得用于存储自由层中的数据的活动STT区域的宽度由导电通孔的宽度限定。

公开(公告)号：US20100276768A1

公开(公告)日：2010-11-04

申请号：US12433023

申请日：2009-04-30

申请人： MICHAEL C. GAIDIS

发明人： MICHAEL C. GAIDIS

IPC分类号： H01L29/82 ,  H01L43/12

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/08

摘要： A magnetic tunnel junction device comprises a substrate including a patterned wiring layer. A magnetic tunnel junction (MTJ) stack is formed over the wiring layer. A low-conductivity layer is formed over the MTJ stack and a conductive hard mask is formed thereon. A spacer material is then deposited that includes a different electrical conductivity than the low conductivity layer. The spacer material is etched from horizontal surfaces so that the spacer material remains only on sidewalls of the hard mask and a stud. A further etch process leaves behind the sidewall-spacer material as a conductive link between a free magnetic layer and the conductive hard mask, around the low-conductivity layer. A difference in electrical conductivity between the stud and the spacer material enhances current flow along the edges of the free layer within the MTJ stack and through the spacer material formed on the sidewalls.

摘要翻译： 磁性隧道结装置包括包括图案化的布线层的基板。 在布线层上形成磁隧道结（MTJ）堆叠。 在MTJ堆叠上形成低导电层，并在其上形成导电硬掩模。 然后沉积包括与低电导率层不同的导电性的间隔物材料。 间隔材料从水平表面被蚀刻，使得间隔物材料仅保留在硬掩模和螺柱的侧壁上。 另外的蚀刻工艺在侧壁间隔材料之后留下了作为导电连接在自由磁性层和导电硬掩模之间的低电导率层周围。 螺柱和间隔物材料之间的导电性差异增强了沿着MTJ堆叠内的自由层的边缘并且通过形成在侧壁上的间隔材料的电流流动。