公开(公告)号：US20130233401A1

公开(公告)日：2013-09-12

申请号：US13846007

申请日：2013-03-18

Applicant: Mariusch GREGOR ,  John W. LANE

Inventor： Mariusch GREGOR ,  John W. LANE

IPC: F17D3/00

CPC classification number: F17D3/00 ,  G01F25/003 ,  G01F25/0053 ,  Y10T137/0324 ,  Y10T137/0363 ,  Y10T137/0379 ,  Y10T137/0402 ,  Y10T137/2524 ,  Y10T137/2529

Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

Abstract translation: 本发明的实施例一般涉及控制蚀刻室中的气流的方法。 这些方法通常包括将单个工艺气体供应源分离成单独的处理室的多个输入，使得每个室在均匀的处理条件下处理衬底。 该方法通常包括使用质量流量控制器作为校准流量比控制器的参考。 可以确定跨度校正因子以解决通过流量比控制器的实际流量和测量流量之间的差异。 跨度校正因子可以用于使用本文提供的等式来确定流量控制器的每个通道的校正设定点。 此外，可以使用本文提供的附加方程式将流量比控制器的设定点与气体无关。