公开(公告)号：US06494967B1

公开(公告)日：2002-12-17

申请号：US09672505

申请日：2000-09-29

申请人： Masahiro Makita ,  Mitsuhiro Nishizaki

发明人： Masahiro Makita ,  Mitsuhiro Nishizaki

IPC分类号： B08B304

CPC分类号： H01L21/67086 ,  B08B3/10 ,  G05D7/0676 ,  H01L21/67057 ,  Y10S134/902

摘要： When trying to keep the amount of a liquid treating chemical in a treating bath constant by discharging almost the same amount of the liquid treating chemical as the liquid treating chemical supplied, the flow of the liquid treating chemical in the treating bath fell into disorder, which made it hard to keep the flow of the liquid treating chemical in the treating bath in the laminar state. A down-flow type chemical treating apparatus 1 in which a liquid treating chemical 21 is supplied from the outside of a treating bath 2 (main bath 3) while the liquid treating chemical 21 is discharged from the bottom portion of the treating bath 2 (main bath 3), comprising a pump 5 on the chemical discharging side of the main bath 3 which consists of a rotary pump allowing to discharge the liquid treating chemical 21 to the outside of the main bath 3 keeping the flow of the liquid treating chemical 21 substantially in the main bath 3 almost in the laminar state.

摘要翻译： 当通过排放与所提供的液体处理化学药物几乎相同量的液体处理化学品来试图将处理浴中的液体处理化学品的量保持恒定时，处理浴中的液体处理化学品的流动变得无序，其中 难以将液体处理化学品的流动保持在层状状态的处理槽中。一种下流式化学处理装置1，其中从处理浴2的外部（主浴）供给液体处理化学物质21 3）当液体处理化学物质21从处理浴2（主浴3）的底部排出时，包括在主浴3的化学品排放侧的泵5，该泵5由允许排出液体的旋转泵 将化学物质21处理到主浴3的外部，使液体处理化学品21的流动基本上保持在主浴3中几乎处于层状状态。

公开(公告)号：US06192902B1

公开(公告)日：2001-02-27

申请号：US09133373

申请日：1998-08-13

申请人： Masahiro Makita ,  Mitsuhiro Nishizaki

发明人： Masahiro Makita ,  Mitsuhiro Nishizaki

IPC分类号： B08B304

CPC分类号： H01L21/67086 ,  B08B3/10 ,  G05D7/0676 ,  H01L21/67057 ,  Y10S134/902

摘要： When trying to keep the amount of a liquid treating chemical in a treating bath constant by discharging almost the same amount of the liquid treating chemical as the liquid treating chemical supplied, the flow of the liquid treating chemical in the treating bath fell into disorder, which made it hard to keep the flow of the liquid treating chemical in the treating bath in the laminar state. A down-flow type chemical treating apparatus 1 in which a liquid treating chemical 21 is supplied from the outside of a treating bath 2 (main bath 3) while the liquid treating chemical 21 is discharged from the bottom portion of the treating bath 2 (main bath 3), comprising a pump 5 on the chemical discharging side of the main bath 3 which consists of a rotary pump allowing to discharge the liquid treating chemical 21 to the outside of the main bath 3 keeping the flow of the liquid treating chemical 21 substantially in the main bath 3 almost in the laminar state.

摘要翻译： 当通过排放与所提供的液体处理化学药物几乎相同量的液体处理化学品来试图将处理浴中的液体处理化学品的量保持恒定时，处理浴中的液体处理化学品的流动变得无序，其中 难以将液体处理化学品的流动保持在层状状态的处理槽中。一种下流式化学处理装置1，其中从处理浴2的外部（主浴）供给液体处理化学物质21 3）当液体处理化学物质21从处理浴2（主浴3）的底部排出时，包括在主浴3的化学品排放侧的泵5，该泵5由允许排出液体的旋转泵 将化学物质21处理到主浴3的外部，使液体处理化学品21的流动基本上保持在主浴3中几乎处于层状状态。

公开(公告)号：US6026832A

公开(公告)日：2000-02-22

申请号：US84170

申请日：1998-05-26

申请人： Nobuaki Sato ,  Mitsuhiro Nishizaki

发明人： Nobuaki Sato ,  Mitsuhiro Nishizaki

IPC分类号： B08B3/12 ,  B08B11/02 ,  H01L21/00 ,  H01L21/304 ,  B08B3/00

CPC分类号： H01L21/67057 ,  B08B11/02 ,  B08B3/12 ,  Y10S134/902

摘要： The invention provides an ultrasonic cleaning apparatus capable of radiating ultrasonic waves effectively over the entire cleaning face of a wafer and thus having an improved cleaning effect. Supporting members 28a, 28b for holding wafers 7 in a fixed attitude in a cleaning liquid 6 are disposed at different heights, and ultrasonic wave protection plates 24a, 24b are respectively provided in front of ultrasonic wave generators 23a, 23b mounted on opposite walls of an ultrasonic wave tank 2 and are each movable between a position in front of the respective ultrasonic wave generator and a standby position retracted from in front of that ultrasonic wave generator. Each of the ultrasonic wave protection plates 24a, 24b is moved into position in front of its respective ultrasonic wave generator when ultrasonic waves are being radiated from the other side. The ultrasonic wave generators 23a, 23b are operated alternately, and an ultrasonic wave shadow region 29a (29b) in the shadow of a supporting member 28a (28b) when ultrasonic waves are being radiated from one side is subsequently irradiated with ultrasonic waves from the other side so that ultrasonic waves are radiated over the entire area of the cleaning face 7a of each wafer 7.

摘要翻译： 本发明提供一种能够在晶片的整个清洁面上有效地辐射超声波并因此具有改善的清洁效果的超声波清洗装置。 在清洁液体6中以固定的姿态保持晶片7的支撑构件28a，28b设置在不同的高度，并且超声波保护板24a，24b分别设置在安装在清洁液体6的相对的壁上的超声波发生器23a，23b的前方 超声波波箱2分别在各超声波发生器前方的位置和从该超声波发生器的前方缩回的待机位置之间移动。 当从另一侧辐射超声波时，每个超声波保护板24a，24b移动到其各自的超声波发生器前方的位置。 超声波发生器23a，23b被交替地操作，并且当从一侧辐射超声波时在支撑构件28a（28b）的阴影中的超声波阴影区域29a（29b）随后被来自另一个的超声波 使得超声波辐射在每个晶片7的清洁面7a的整个区域上。