Periplanone-B analogues as well as cockroach attractant
    1.
    发明授权
    Periplanone-B analogues as well as cockroach attractant 失效
    Periplanone-B类似物以及蟑螂引诱剂

    公开(公告)号:US5126128A

    公开(公告)日:1992-06-30

    申请号:US598435

    申请日:1990-10-16

    摘要: Periplanone-B analogue of (4E, 8R, 9R, 10R)-8,9-epoxy-5-methyl-10,10-methylene-oxy-4-cyclodecen-1-one, suitable as cockroach attractant can be prepared by reacting 6-methyl-2,6-cyclodecadien-1-one with a silylating reagent under the presence of a basic catalyst to form a silyldienol ether, reacting the resultant ether with an organic peracid to obtain (2Z, 6E)-10-hydroxy-6-methyl-2,6-cyclodecadien-1-one, reacting the resultant product with a peroxide under the presence of a basic catalyst after protecting hydroxy groups thereof with protection groups to obtain an epoxide, reacting the epoxide with chloromethyl lithium or dimethyl sulfonium methylide thereby introducing a spiroepoxy group and then removing the protection groups, to obtain (1S, 4E, 8R, 9R, 10S)-8,9-epoxy-5-methyl-10,10-methyleneoxy-4-cyclodecen-1-ol and, further, oxidizing the resultant product with a chromic acid type or dimethyl sulfoxide type oxidizing agents.

    摘要翻译: 适合作为蟑螂引诱剂的(4E,8R,9R,10R)-8,9-环氧-5-甲基-10,10-亚甲基氧基-4-环十一烯-1-酮的平均单体B类似物可以通过使 6-甲基-2,6-环十二碳二烯-1-酮与甲硅烷基化试剂在碱性催化剂存在下反应形成甲硅烷基二烯醚,使所得醚与有机过酸反应,得到(2Z,6E)-10-羟基 - 6-甲基-2,6-环癸二烯-1-酮,在碱性催化剂存在下,用保护基保护羟基后,使所得产物与过氧化物反应,得到环氧化物,使环氧化物与氯甲基锂或二甲基锍 (1S,4E,8R,9R,10S)-8,9-环氧-5-甲基-10,10-亚甲基氧基-4-环十一烯-1-醇,由此引入螺环氧基,然后除去保护基,得到 并进一步用铬酸型或二甲基亚砜型氧化剂氧化所得产物。

    GAS-INSULATED ELECTRIC POWER APPARATUS
    3.
    发明申请
    GAS-INSULATED ELECTRIC POWER APPARATUS 有权
    气体绝缘电力设备

    公开(公告)号:US20090116176A1

    公开(公告)日:2009-05-07

    申请号:US12092883

    申请日:2006-06-19

    IPC分类号: H02B13/035

    CPC分类号: H02B5/06 H02B1/22 H02B13/0352

    摘要: The present invention provides a gas-insulated electric apparatus which includes: a vertically-arranged gas insulation main tank; a first gas insulation branch pipe connected to and making right angle with the gas insulation main tank; a second gas insulation branch pipe connected to and making right angle with the gas insulation main tank; a breaker manipulator which is arranged on an upper side of the main tank, a feeder-side current transformer which is incorporated in the first gas insulation branch pipe; a voltage transformer arranged on the first gas insulation branch pipe; and an arrestor arranged on the first gas insulation branch pipe and connected with the feeder.

    摘要翻译: 本发明提供一种气体绝缘电气设备,其包括:垂直布置的气体绝缘主罐; 与气体绝缘主油箱连接并成直角的第一气体绝缘支管; 与气体绝缘主油箱连接并成直角的第二气体绝缘支管; 布置在主箱的上侧的断路器操纵器,并入第一气体绝缘支管中的馈电侧电流互感器; 布置在第一气体绝缘支管上的电压互感器; 以及配置在第一气体绝缘支管上并与进料器连接的避雷器。

    Gas-insulated electric power apparatus
    5.
    发明授权
    Gas-insulated electric power apparatus 有权
    气体绝缘电力设备

    公开(公告)号:US07835140B2

    公开(公告)日:2010-11-16

    申请号:US12092883

    申请日:2006-06-19

    IPC分类号: H02B5/06 H02B5/00

    CPC分类号: H02B5/06 H02B1/22 H02B13/0352

    摘要: The present invention provides a gas-insulated electric apparatus which includes: a vertically-arranged gas insulation main tank; a first gas insulation branch pipe connected to and making right angle with the gas insulation main tank; a second gas insulation branch pipe connected to and making right angle with the gas insulation main tank; a breaker manipulator which is arranged on an upper side of the main tank, a feeder-side current transformer which is incorporated in the first gas insulation branch pipe; a voltage transformer arranged on the first gas insulation branch pipe; and an arrestor arranged on the first gas insulation branch pipe and connected with the feeder.

    摘要翻译: 本发明提供一种气体绝缘电气设备,其包括:垂直布置的气体绝缘主罐; 与气体绝缘主油箱连接并成直角的第一气体绝缘支管; 与气体绝缘主油箱连接并成直角的第二气体绝缘支管; 布置在主箱的上侧的断路器操纵器,并入第一气体绝缘支管中的馈电侧电流互感器; 布置在第一气体绝缘支管上的电压互感器; 以及配置在第一气体绝缘支管上并与进料器连接的避雷器。

    Method of obtaining semiconductor chips
    7.
    发明授权
    Method of obtaining semiconductor chips 失效
    获得半导体芯片的方法

    公开(公告)号:US5024970A

    公开(公告)日:1991-06-18

    申请号:US446125

    申请日:1989-12-05

    申请人: Masataka Mori

    发明人: Masataka Mori

    摘要: An insulating strip layer is provided in the middle portion of an isolating zone which isolates electronic element regions from each other. A platinum layer is formed and sintered, whereby platinum silicide layers are obtained between the insulating strip layer and the electronic element regions. A silicon nitride film is formed and etched by plasma. The plasma etches the silicon nitride film and selectively etches the wafer through the gaps between the platinum silicide layers and layers adjacent thereto whereby grooves are obtained in the isolating zone. A crack which may be caused in the cutting or dicing process is stopped at the grooves.

    摘要翻译: 绝缘带层设置在隔离区的中间部分,隔离区将电子元件区彼此隔离。 形成铂层并烧结,由此在绝缘带层和电子元件区之间获得铂硅化物层。 通过等离子体形成并蚀刻氮化硅膜。 等离子体蚀刻氮化硅膜并选择性地蚀刻晶片通过铂硅化物层和与其相邻的层之间的间隙,从而在隔离区中获得凹槽。 在切割或切割过程中可能引起的裂纹在凹槽处停止。