公开(公告)号：US20250112035A1

公开(公告)日：2025-04-03

申请号：US18401902

申请日：2024-01-02

Applicant: Microchip Technology Incorporated

Inventor： Steve Nagel ,  Bomy Chen ,  Bruce Odekirk ,  Pejman Khosropour ,  Robin Liu ,  Andy Tu ,  Thomas Krutsick

IPC: H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  H01L29/20

Abstract: A method includes performing a pressing operation on a volume of silicon carbide (SiC) powder to form a polycrystalline SiC (poly-SiC) ingot, and divide the poly-SiC ingot into a plurality of poly-SiC wafer bases. The method further includes, for a respective poly-SiC wafer base, bonding a silicon (Si) wafer structure to the respective poly-SiC wafer base to define a hybrid Si/poly-SiC stack structure, and performing a dividing process to remove a partial thickness of the Si wafer structure from the hybrid Si/poly-SiC stack structure to provide a hybrid Si/poly-SiC wafer comprising a remaining portion of the Si wafer structure bonded to the respective poly-SiC wafer base.