公开(公告)号：US20250054761A1

公开(公告)日：2025-02-13

申请号：US18676191

申请日：2024-05-28

Applicant: Microchip Technology Incorporated

Inventor： Shesh Mani Pandey ,  Bruce Odekirk

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/51

Abstract: A semiconductor device that may include a silicon carbide substrate, a silicon layer disposed on the silicon carbide substrate, and a gate oxide layer disposed on the silicon layer. The silicon layer may be implanted within the silicon carbide substrate. The silicon layer may comprise a thickness of 100 angstroms 5000 angstroms. The silicon layer may contain less than one percent carbon, or may contain a certain percentage of carbon that decreases as a distance from the surface of the silicon carbide substrate increases.