公开(公告)号：US20240038311A1

公开(公告)日：2024-02-01

申请号：US17874828

申请日：2022-07-27

Applicant: Micron Technology, Inc.

Inventor： Yu-Chung Lien ,  Ankit V. Vashi ,  Zhenming Zhou ,  Jung Sheng Hoei

IPC: G11C16/34 ,  G11C16/08

CPC classification number: G11C16/3459 ,  G11C16/349 ,  G11C16/08

Abstract: A method includes designating a first subset of non-volatile memory with a first reliability designation, designating a second subset of non-volatile memory blocks with a second reliability designation, configuring the first subset of non-volatile memory blocks and the second subset of non-volatile memory blocks in a first verification mode, writing data to first subset of non-volatile memory blocks and the second subset of non-volatile memory blocks in the absence of write verification.