Abstract:
Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.
Abstract:
Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.
Abstract:
Antifuses having two or more materials with differing work function values may be fabricated as recessed access devices and spherical recessed access devices for use with integrated circuit devices and semiconductor devices. The use of materials having different work function values in the fabrication of recessed access device antifuses allows the breakdown areas of the antifuse device to be customized or predicted.