公开(公告)号：US11088147B2

公开(公告)日：2021-08-10

申请号：US16453788

申请日：2019-06-26

Applicant: Micron Technology, Inc.

Inventor： Jaydip Guha ,  Saurabh Keshav ,  Srinivas Pulugurtha ,  Mohd Kamran Akhtar ,  James B. Franek ,  Alex J. Schrinsky

IPC: H01L27/108 ,  H01L21/263 ,  H01L21/223

Abstract: Apparatus, such as electronic devices and structures thereof, include at least one doped surface of a base (e.g., semiconductor) material. A dopant of the at least one doped surface is concentrated along the surface, defining a thickness, on or in the base material, not exceeding about one atomic layer. Methods for forming the doped surfaces involve gas-phase doping exposed surfaces of the base material in situ, within a same material-removal tool used to form at least one opening defined at least partially by the base material and into which the dopant is to be introduced.