Delay of self-refreshing at memory die

    公开(公告)号:US11710514B2

    公开(公告)日:2023-07-25

    申请号:US17493501

    申请日:2021-10-04

    CPC classification number: G11C11/40622 G11C11/4076 G11C11/40615 G11C17/16

    Abstract: First signaling indicative of instructions to enter a self-refresh (SREF) mode can be received concurrently by a plurality of memory dies. Responsive to a memory die of the plurality of memory dies entering the SREF mode, self-refreshing of memory banks of the memory die can be delayed, at the memory die and based on fuse states of an array of fuses of the memory die, an amount of time relative to receipt of the signaling by the memory die. Delaying self-refreshing of memory banks of memory dies in a staggered, or asynchronous, manner can evenly distribute power consumption of the memory dies so that the likelihood of an associated power spike is reduced or eliminated.

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