公开(公告)号：US20240371452A1

公开(公告)日：2024-11-07

申请号：US18648110

申请日：2024-04-26

Applicant: Micron Technology, Inc.

Inventor： Pitamber Shukla, ,  Robert Winston Mason ,  Huai-Yuan Tseng ,  Akira Goda ,  Kishore Kumar Muchherla

IPC: G11C16/34 ,  G11C16/20

Abstract: Methods, systems, and devices for techniques for managing a voltage recovery operation are described. In some cases, as part of performing a write command to store data to a set of memory cells, the memory system may store an indication of the initial time at which the write operation occurred, the temperature of the set of memory cells at the initial time, or both. The memory system may subsequently manage an accumulated value based on a duration from the initial time and the temperature of the set of memory cells during the duration. If the accumulated value exceeds an accumulation threshold, the memory system may identify an indication of degradation of the set of memory cells. If the indication exceeds a degradation threshold, the memory system may perform a voltage recovery operation to modify voltages of the set of memory cells.