公开(公告)号：US11264568B2

公开(公告)日：2022-03-01

申请号：US15223136

申请日：2016-07-29

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Mattia Boniardi ,  Enrico Varesi ,  Raffaella Calarco ,  Jos E. Boschker

IPC: H01L45/00 ,  H01L27/24

Abstract: The present disclosure includes textured memory cell structures and method of forming the same. In one or more embodiments, a memory cell includes a buffer portion formed on an amorphous portion and an active portion formed on the buffer portion, wherein the active portion is textured with a single out of plane orientation.

公开(公告)号：US10553792B2

公开(公告)日：2020-02-04

申请号：US15841356

申请日：2017-12-14

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Mattia Boniardi ,  Enrico Varesi ,  Raffaella Calarco ,  Jos E. Boschker

IPC: H01L45/00 ,  H01L27/24

Abstract: The present disclosure includes textured memory cell structures and method of forming the same. In one or more embodiments, a memory cell includes a buffer portion formed on an amorphous portion and an active portion formed on the buffer portion, wherein the active portion is textured with a single out of plane orientation.

公开(公告)号：US20180114902A1

公开(公告)日：2018-04-26

申请号：US15841356

申请日：2017-12-14

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Mattia Boniardi ,  Enrico Varesi ,  Raffaella Calarco ,  Jos E. Boschker

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/144 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1616

Abstract: The present disclosure includes textured memory cell structures and method of forming the same. In one or more embodiments, a memory cell includes a buffer portion formed on an amorphous portion and an active portion formed on the buffer portion, wherein the active portion is textured with a single out of plane orientation.

公开(公告)号：US20180033962A1

公开(公告)日：2018-02-01

申请号：US15223136

申请日：2016-07-29

Applicant: Micron Technology, Inc.

Inventor： Andrea Redaelli ,  Mattia Boniardi ,  Enrico Varesi ,  Raffaella Calarco ,  Jos E. Boschker

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/144 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1608 ,  H01L45/1616

Abstract: The present disclosure includes textured memory cell structures and method of forming the same. In one or more embodiments, a memory cell includes a buffer portion formed on an amorphous portion and an active portion formed on the buffer portion, wherein the active portion is textured with a single out of plane orientation.