公开(公告)号：US20250169262A1

公开(公告)日：2025-05-22

申请号：US19030871

申请日：2025-01-17

Applicant: Micron Technology, Inc.

Inventor： Robert R. Rhodehouse

IPC: H10H29/14 ,  H10H20/00 ,  H10H20/01 ,  H10H20/811 ,  H10H20/824 ,  H10H20/831

Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

公开(公告)号：US20180006084A1

公开(公告)日：2018-01-04

申请号：US15690081

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Robert R. Rhodehouse

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/38

Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

公开(公告)号：US12205975B2

公开(公告)日：2025-01-21

申请号：US17076557

申请日：2020-10-21

Applicant: Micron Technology, Inc.

Inventor： Robert R. Rhodehouse

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/38

Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

公开(公告)号：US20210036052A1

公开(公告)日：2021-02-04

申请号：US17076557

申请日：2020-10-21

Applicant: Micron Technology, Inc.

Inventor： Robert R. Rhodehouse

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/38

Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

公开(公告)号：US10825859B2

公开(公告)日：2020-11-03

申请号：US15690081

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Robert R. Rhodehouse

IPC: H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L27/15 ,  H01L33/00

Abstract: Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.