公开(公告)号：US20250138996A1

公开(公告)日：2025-05-01

申请号：US18383712

申请日：2023-10-25

Applicant: Micron Technology, Inc.

Inventor： Li-Te Chang ,  Charles S. Kwong ,  Wei Wang ,  Murong Lang ,  Shenming Zhou

IPC: G06F12/02

Abstract: Aspects of the present disclosure configure a system component, such as a memory sub-system controller, to perform adaptive read level threshold voltage operations. The controller determines a first read level offset associated with reading a first set of data from a first level using a first read level of a plurality of read levels. The controller applies the first read level offset to a machine learning model to estimate a second read level offset, associated with reading a second set of data from a second level of the plurality of levels, using a second read level of the plurality of read levels. The controller updates, based on the first read level offset and the estimated second read level offset, a look-up table that includes a set of read level offsets used to read data from the plurality of levels of the individual component.