公开(公告)号：US20200066730A1

公开(公告)日：2020-02-27

申请号：US16111499

申请日：2018-08-24

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Vlad Temchenko ,  Shivani Srivastava

IPC: H01L27/108 ,  H01L21/308

Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.

公开(公告)号：US10991700B2

公开(公告)日：2021-04-27

申请号：US16793888

申请日：2020-02-18

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Vlad Temchenko ,  Shivani Srivastava

IPC: H01L27/108 ,  H01L21/308 ,  G11C11/408

Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.

公开(公告)号：US20200185389A1

公开(公告)日：2020-06-11

申请号：US16793888

申请日：2020-02-18

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Vlad Temchenko ,  Shivani Srivastava

IPC: H01L27/108 ,  H01L21/308

Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.

公开(公告)号：US10593678B1

公开(公告)日：2020-03-17

申请号：US16111499

申请日：2018-08-24

Applicant: Micron Technology, Inc.

Inventor： Song Guo ,  Sanh D. Tang ,  Vlad Temchenko ,  Shivani Srivastava

IPC: H01L27/108 ,  H01L21/308 ,  G11C11/408

Abstract: A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.