公开(公告)号：US10385443B2

公开(公告)日：2019-08-20

申请号：US15353000

申请日：2016-11-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dai-Liang Ma ,  Hsueh-I Chen ,  Bo-Cheng Lin ,  Cheng-Jung Ko ,  Ying-Cong Zhao ,  Chih-Wei Kuo ,  Shu-Yu Yeh

IPC: C30B29/36 ,  C23C14/24 ,  C30B23/00 ,  C23C14/06 ,  C23C14/26 ,  C30B23/02 ,  C30B23/06 ,  C30B29/40

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.