公开(公告)号：US20030211666A1

公开(公告)日：2003-11-13

申请号：US10430540

申请日：2003-05-06

Applicant: NEC LCD TECHNOLOGIES, LTD.

Inventor： Hiroshi Okumura

IPC: H01L021/00 ,  H01L029/76 ,  H01L031/062

CPC classification number: H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: A thin-film transistor is formed by a polycrystalline silicon film having a thin-film part and a thick-film part, the thin-film part minimally being used as a channel part. The polycrystalline silicon film is formed by laser annealing with an energy density that completely melts the thin-film part but does not completely melt the thick-film part. Because large coarse crystal grains growing from the boundary between the thin-film part and the thick-film part form the channel part, it is possible to use a conventional laser annealing apparatus to easily achieve high carrier mobility and low leakage current and the like.

Abstract translation: 薄膜晶体管由具有薄膜部分和厚膜部分的多晶硅膜形成，薄膜部分最少用作沟道部分。 多晶硅膜通过激光退火形成，其能量密度完全熔化薄膜部分，但不完全熔化厚膜部分。 由于从薄膜部分和厚膜部分之间的边界生长的大的粗晶粒形成沟道部分，所以可以使用传统的激光退火装置来容易地实现高载流子迁移率和低泄漏电流等。

公开(公告)号：US20040005743A1

公开(公告)日：2004-01-08

申请号：US10444288

申请日：2003-05-22

Applicant: NEC LCD Technologies, Ltd. ,  NEC Corporation

Inventor： Hiroshi Okumura ,  Kunihiro Shiota

IPC: H01L021/00

CPC classification number: H01L29/66757 ,  H01L29/4908

Abstract: After a polysilicon semiconductor film 5 and a first gate oxide film 6 are formed on a transparent insulating substrate 1, the semiconductor film 5 and the first gate oxide film 6 are patterned into an island shape to form an island part. At this time, an overhang part 8 of a visor shape is formed where side end surfaces of the first gate oxide film 6 and the semiconductor film 5 are not aligned and an end part of the first gate oxide film 6 projects slightly from a position of a side end surface of the semiconductor film 5. The overhang part 8 is removed, for example, during cleaning, which thus enhances yield.

Abstract translation: 在透明绝缘基板1上形成多晶硅半导体膜5和第一栅极氧化膜6之后，将半导体膜5和第一栅极氧化膜6图案化成岛状以形成岛状部分。 此时，形成遮光板形状的突出部8，其中第一栅氧化膜6和半导体膜5的侧端面未对准，并且第一栅极氧化膜6的端部从 半导体膜5的侧端面。例如，在清洁期间移除突出部8，从而提高了产量。