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公开(公告)号：US20240365588A1
公开(公告)日：2024-10-31
申请号：US18766944
申请日：2024-07-09
申请人： Japan Display Inc.
发明人： Satoshi MARUYAMA
IPC分类号： H10K59/121 , H01L27/06 , H01L27/12 , H01L29/66 , H01L29/786 , H10K59/12 , H10K59/131
CPC分类号： H10K59/1213 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H10K59/1216 , H10K59/131 , H01L27/0688 , H01L27/1222 , H01L27/124 , H01L27/1262 , H01L29/66757 , H01L29/66969 , H01L29/78675 , H01L29/7869 , H10K59/1201
摘要： A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode. The first thin film transistor is located below the second thin film transistor.
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公开(公告)号：US12127445B2
公开(公告)日：2024-10-22
申请号：US17451880
申请日：2021-10-22
发明人： Yugwang Jeong , Daesoo Kim , Sungwon Cho , Subin Bae
IPC分类号： H01L27/14 , H01L27/12 , H01L29/786 , H10K59/12 , H10K59/121 , H10K59/123 , H10K59/131 , H10K71/00
CPC分类号： H10K59/123 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/78648 , H01L29/78675 , H01L29/7869 , H10K59/1201 , H10K59/1213 , H10K59/1216 , H10K59/131 , H10K71/00
摘要： A display apparatus includes: a substrate; a first semiconductor layer on the substrate, and including a silicon semiconductor; a second semiconductor layer on the first semiconductor layer, and including an oxide semiconductor; a first conductive layer on the second semiconductor layer; at least one metal layer between the first semiconductor layer and the first conductive layer; and a first contact hole to electrically connect the first semiconductor layer to the first conductive layer. An inner surface of the first contact hole includes a side surface of the at least one metal layer.
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公开(公告)号：US12127435B2
公开(公告)日：2024-10-22
申请号：US18140530
申请日：2023-04-27
发明人： Jae Bum Han , Moon Sung Kim , Young Gil Park , Soo Im Jeong
IPC分类号： H01L29/08 , H10K59/121 , H10K59/40 , G09G3/3233 , H01L27/12 , H01L29/66 , H01L29/786 , H10K59/12
CPC分类号： H10K59/1213 , H10K59/40 , G09G3/3233 , G09G2300/0426 , H01L27/1222 , H01L27/1274 , H01L29/66757 , H01L29/78675 , H10K59/1201
摘要： A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.
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公开(公告)号：US12125855B2
公开(公告)日：2024-10-22
申请号：US18459773
申请日：2023-09-01
申请人： Japan Display Inc.
发明人： Masato Nakamura
IPC分类号： H01L27/12 , G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L27/02 , H01L29/786
CPC分类号： H01L27/1244 , G02F1/136204 , G02F1/136286 , G02F1/1368 , H01L27/0288 , H01L27/1222 , H01L27/124 , H01L29/78675 , G02F1/133388 , G02F1/133512 , G02F1/133514 , G02F1/134309 , G02F1/136227 , G02F1/13685 , G02F2201/121 , G02F2201/122 , G02F2201/123 , G02F2202/104 , G02F2202/22 , H01L29/78633 , H01L29/78645 , H01L29/78696
摘要： According to one embodiment, a display device includes first semiconductor layers crossing a first scanning line in a non-display area, the first semiconductor layers being a in number, second semiconductor layers crossing a second scanning line in the non-display area, the second semiconductor layers being b in number, and an insulating film disposed between the first and second semiconductor layers and the first and second scanning lines, wherein a and b are integers greater than or equal to 2, and a is different from b, and the first and second semiconductor layers are both entirely covered with the insulating film.
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公开(公告)号：US20240334740A1
公开(公告)日：2024-10-03
申请号：US18739329
申请日：2024-06-11
发明人： Myounggeun Cha , Sanggun Choi , Jiyeong Shin , Kiseok Choi
IPC分类号： H10K59/121 , H01L27/12 , H01L29/786 , H10K59/124 , H10K59/126 , H10K59/65 , H10K77/10 , H10K102/00
CPC分类号： H10K59/121 , H10K59/1213 , H10K59/124 , H10K59/126 , H10K59/65 , H10K77/111 , H01L27/1222 , H01L29/78633 , H01L29/78675 , H10K2102/311
摘要： Provided are a display panel and an electronic apparatus including the display panel. The display panel includes a substrate including a polymer resin; first and second pixel circuits each including a thin-film transistor, a first light-emitting diode connected to the first pixel circuit and located in a first display area; a second light-emitting diode connected to the second pixel circuit and located in a sub-display area of a second display area, a bottom metal layer in the second display area and between the substrate and the second pixel circuit; and a protective layer between the substrate and the bottom metal layer and corresponding to the first and second display areas, wherein the bottom metal layer includes a first opening in a transmissive area, and the protective layer includes a second opening in the transmissive area and overlapping the first opening of the bottom metal layer.
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公开(公告)号：US12108627B2
公开(公告)日：2024-10-01
申请号：US17533127
申请日：2021-11-23
申请人： Japan Display Inc.
发明人： Akihiro Hanada , Kentaro Miura , Hajime Watakabe , Ryo Onodera
IPC分类号： H01L27/32 , H01L51/56 , H10K59/121 , H10K59/126 , H10K71/00 , H01L27/12 , H01L29/786 , H10K59/12 , H10K59/123
CPC分类号： H10K59/1213 , H10K59/126 , H10K71/00 , H01L27/1225 , H01L27/1251 , H01L29/78618 , H01L29/78633 , H01L29/78675 , H01L29/7869 , H10K59/1201 , H10K59/123
摘要： A display device includes a first transistor having a first semiconductor layer, in which a first source region includes a first region in contact with a first source electrode, and a first drain region includes a second region in contact with a first drain electrode. The first source and drain regions, the first region, and the second region each include a first impurity element. In a region close to an interface between the first semiconductor layer and a first insulating layer, a concentration of the first impurity element included in the first and second regions is higher than a concentration of the first impurity element included in the first source region and the first drain region. A method of manufacturing a display device includes forming a first gate electrode and a light shielding layer on a first insulating layer, and forming a second semiconductor layer on the light shielding layer.
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公开(公告)号：US12089448B2
公开(公告)日：2024-09-10
申请号：US18298534
申请日：2023-04-11
发明人： Hwi Kim
IPC分类号： H01L27/14 , H10K59/121 , H10K59/131 , G09G3/3258 , G09G3/3266 , H01L27/12 , H01L29/786
CPC分类号： H10K59/1213 , H10K59/1216 , H10K59/131 , G09G3/3258 , G09G3/3266 , G09G2320/02 , G09G2330/00 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/78675 , H01L29/7869
摘要： A display device includes a substrate including a pixel area and a transmission area, and a pixel circuit disposed in the pixel area. The pixel circuit includes a first thin-film transistor included in a first multi-layer film, and a second thin-film transistor included in a second multi-layer film on the first multi-layer film. The first thin-film transistor and the second thin-film transistor are electrically connected to each other. The display device also includes a display element disposed on the second multi-layer film and including a pixel electrode electrically connected to the second thin-film transistor via a contact hole defined in the second multi-layer film, an opposite electrode facing the pixel electrode, and an intermediate layer between the pixel electrode and the opposite electrode.
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8.发明授权公开(公告)号：US12080725B2
公开(公告)日：2024-09-03
申请号：US18221285
申请日：2023-07-12
发明人： Xiangxin Rui , Lai Zhao , Jrjyan Jerry Chen , Soo Young Choi , Yujia Zhai
IPC分类号： H01L27/12 , H01L29/49 , H01L29/786 , H01L49/02
CPC分类号： H01L27/1255 , H01L27/1222 , H01L27/1237 , H01L27/1248 , H01L27/1259 , H01L27/1262 , H01L28/55 , H01L29/4908 , H01L29/78675
摘要： Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source and drain electrodes formed on a substrate, and an insulating layer formed on a substrate, wherein the insulating layer is a hybrid film stack having a dielectric layer comprising a zirconium containing material disposed on an interface layer formed above or below the gate, source and drain electrodes.
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公开(公告)号：US12058889B2
公开(公告)日：2024-08-06
申请号：US17530387
申请日：2021-11-18
发明人： Suyeon Yun , Minsoo Kim , Yoona Kim , Seongmin Wang , Anna Ryu , Jeehyun Lee , Heesoon Jeong , Byunghee Choi
IPC分类号： H01L27/14 , H10K59/121 , H10K59/126 , H10K59/131 , H10K59/65 , H01L27/12 , H01L29/786
CPC分类号： H10K59/121 , H10K59/1213 , H10K59/1216 , H10K59/126 , H10K59/131 , H10K59/65 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/78633 , H01L29/78675 , H01L29/7869
摘要： An embodiment of a display device includes: a first display area; a second display area including a transmission area; a third display area between the first display area and the second display area; and a plurality of pixel circuits in the third display area and electrically connected to the plurality of third light-emitting elements, respectively. Each of the plurality of pixel circuits includes: a first thin-film transistor including a first semiconductor layer and a first gate electrode overlapping at least a portion of the first semiconductor layer; a second thin-film transistor including a second semiconductor layer including a material different from that of the first semiconductor layer and a second gate electrode overlapping at least a portion of the second semiconductor layer; and a bottom shielding layer below the second semiconductor layer and overlapping at least a portion of the second semiconductor layer on a plane.
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公开(公告)号：US12057466B2
公开(公告)日：2024-08-06
申请号：US17323119
申请日：2021-05-18
申请人： Japan Display Inc.
发明人： Makoto Uchida , Takanori Tsunashima
IPC分类号： H01L29/78 , G06V40/13 , H01L27/146 , H01L29/786 , H10K59/65 , G06F3/044
CPC分类号： H01L27/14678 , G06V40/1318 , H01L27/14616 , H01L29/78648 , H01L29/78675 , H01L29/7869 , H10K59/65 , G06F3/044
摘要： According to an aspect, a detection device includes: an insulating substrate; a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light; a first switching element that is provided for each photoelectric conversion element and includes a first semiconductor, a source electrode, and a drain electrode; and an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate.
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