Underbump metallization dimension variation with improved reliability

    公开(公告)号:US10825789B1

    公开(公告)日:2020-11-03

    申请号:US16550549

    申请日:2019-08-26

    Applicant: NXP B.V.

    Abstract: One embodiment of a packaged semiconductor device includes: a redistributed layer (RDL) structure formed over an active side of a semiconductor die embedded in mold compound, the RDL structure includes a plurality of solder ball pads that in turn includes: a set of first solder ball pads located on a front side of the packaged semiconductor device within a footprint of the semiconductor die, and a set of second solder ball pads located on the front side of the packaged semiconductor device outside of the footprint of the semiconductor die, each first solder ball pad includes a first center portion having a first diameter measured between opposite outer edges of the first center portion, each second solder ball pad includes a second center portion having a second diameter measured between opposite outer edges of the second center portion, and the first diameter is smaller than the second diameter.

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