公开(公告)号：US20130146967A1

公开(公告)日：2013-06-13

申请号：US13659678

申请日：2012-10-24

Applicant: NXP B.V.

Inventor： Steven Thomas Peake ,  Phil Rutter

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7813 ,  H01L21/26513 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734

Abstract: A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device.

Abstract translation: 具有侧面RESURF柱的沟槽栅极器件在栅极沟槽下方具有额外的注入。 附加的注入减少了RESURF柱之间的半导体漂移区域的有效宽度，并且这提供了额外的栅极屏蔽，其改善了器件的电特性。

公开(公告)号：US20130146972A1

公开(公告)日：2013-06-13

申请号：US13682792

申请日：2012-11-21

Applicant: NXP B.V.

Inventor： Phil Rutter ,  Ian Culshaw ,  Steven Thomas Peake

IPC: H01L27/088

CPC classification number: H01L27/088 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7817 ,  H01L29/7823

Abstract: A semiconductor uses an isolation trench, and one or more additional trenches to those required for isolation are provided. These additional trenches can be connected between a transistor gate and the drain to provide additional gate-drain capacitance, or else they can be used to form series impedance coupled to the transistor gate. These measures can be used separately or in combination to reduce the switching speed and thereby reduce current spikes.

Abstract translation: 半导体使用隔离沟槽，并且提供了一个或多个附加的沟槽到需要隔离的沟槽。 这些额外的沟槽可以连接在晶体管栅极和漏极之间以提供额外的栅极 - 漏极电容，或者它们可以用于形成耦合到晶体管栅极的串联阻抗。 这些措施可以单独使用或组合使用，以降低开关速度，从而减少电流尖峰。

公开(公告)号：US09006822B2

公开(公告)日：2015-04-14

申请号：US13659678

申请日：2012-10-24

Applicant: NXP B.V.

Inventor： Steven Thomas Peake ,  Phil Rutter

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L21/26513 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734

Abstract: A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device.

Abstract translation: 具有侧面RESURF柱的沟槽栅极器件在栅极沟槽下方具有额外的注入。 附加的注入减少了RESURF柱之间的半导体漂移区域的有效宽度，并且这提供了额外的栅极屏蔽，其改善了器件的电特性。