公开(公告)号：US10109564B2

公开(公告)日：2018-10-23

申请号：US15431124

申请日：2017-02-13

Applicant: NXP B.V.

Inventor： Roelf Groenhuis ,  Leo Van Gemert ,  Tonny Kamphuis ,  Jan Gulpen

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

Abstract: This disclosure relates to a method of forming a wafer level chip scale semiconductor package, the method comprising: providing a carrier having a cavity formed therein; forming electrical contacts at a base portion and sidewalls portions of the cavity; placing a semiconductor die in the base of the cavity; connecting bond pads of the semiconductor die to the electrical contacts; encapsulating the semiconductor die; and removing the carrier to expose the electrical contacts, such that the electrical contacts are arranged directly on the encapsulation material.