公开(公告)号：US11610978B2

公开(公告)日：2023-03-21

申请号：US17199153

申请日：2021-03-11

Applicant: NXP B.V.

Inventor： Xin Lin ,  Ronghua Zhu ,  Zhihong Zhang ,  Yujing Wu ,  Pete Rodriquez

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/762 ,  H01L29/40 ,  H01L29/423 ,  H01L29/08 ,  H01L29/78 ,  H01L27/02 ,  H01L29/786

Abstract: A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.

公开(公告)号：US20220293771A1

公开(公告)日：2022-09-15

申请号：US17199153

申请日：2021-03-11

Applicant: NXP B.V.

Inventor： Xin Lin ,  Ronghua Zhu ,  Zhihong Zhang ,  Yujing Wu ,  Pete Rodriquez

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/78

Abstract: A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.