公开(公告)号：US20030013266A1

公开(公告)日：2003-01-16

申请号：US10101318

申请日：2002-03-20

Applicant: National Inst. of Advanced Ind. Science and Tech.

Inventor： Kenji Fukuda ,  Junji Senzaki ,  Ryoji Kosugi ,  Kazuo Arai ,  Seiji Suzuki

IPC: H01L021/76

CPC classification number: H01L21/049 ,  H01L29/045 ,  H01L29/1608 ,  Y10S438/931

Abstract: A semiconductor device is manufactured using a SiC substrate. On a semiconductor region a region formed of SiC having an (11-20) face orientation is formed. A gate insulation layer is a gate oxidation layer. The surface of the semiconductor region is cleaned, and the gate insulation layer is formed in an atmosphere containing hydrogen or water vapor After the gate insulation layer has been formed, the substrate is heat-treated in an atmosphere containing hydrogen or water vapor. This reduces the interface-trap and the semiconductor region.

Abstract translation: 使用SiC衬底制造半导体器件。 在半导体区域形成由具有（11-20）面取向的SiC形成的区域。 栅极绝缘层是栅极氧化层。 半导体区域的表面被清洁，并且在包含氢或水蒸气的气氛中形成栅极绝缘层。在形成栅极绝缘层之后，将衬底在含有氢或水蒸气的气氛中进行热处理。 这减少了界面陷阱和半导体区域。